Difference between revisions of "User talk:Foretony"
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Use 2 MeV protons to irradiate zirconium to study the temperature dependence of the initial recombination. The incident proton causes surface damage on the zirconium during the ballistic phase knout out. Recombination occurs afterwards and can be temperature dependent. | Use 2 MeV protons to irradiate zirconium to study the temperature dependence of the initial recombination. The incident proton causes surface damage on the zirconium during the ballistic phase knout out. Recombination occurs afterwards and can be temperature dependent. | ||
Revision as of 22:02, 22 March 2019
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Use 2 MeV protons to irradiate zirconium to study the temperature dependence of the initial recombination. The incident proton causes surface damage on the zirconium during the ballistic phase knout out. Recombination occurs afterwards and can be temperature dependent.
2.6 MeV proton irradiation effects on the surface integrity of depleted UO2 https://www.sciencedirect.com/science/article/pii/S0168583X1301152X
Media:Zr-Alpha_IradDamageSimul_O_Trachenko_2001.pdf
Media:Zr-IrradDamage_Zarkadoula_2014.pdf
article on silicon damage from ions
https://www.sciencedirect.com/science/article/pii/S0168583X14002183
measuring ion damage to UO2 using Raman scattering
Appl. Phys. Lett. 100, 251914 (2012); https://doi.org/10.1063/1.4729588 File:Guijmbretiere APL 2012.pdf
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