Revision as of 23:34, 4 July 2019

Teaching

Scholarship

INL internships (max 3 years)

https://inlportal.inl.gov/portal/server.pt/community/education/679/inl_graduate_internship

JLab Cubicle # F348, Computer is attached to Ethernet port D157

JLab

IAC

Photon_Activation_Analysis_Wiki

INL

Use 2 MeV protons to irradiate zirconium to study the temperature dependence of the initial recombination. The incident proton causes surface damage on the zirconium during the ballistic phase knout out. Recombination occurs afterwards and can be temperature dependent.

2.6 MeV proton irradiation effects on the surface integrity of depleted UO2 (effects seen after 10^{17} protons/cm^2 ) https://www.sciencedirect.com/science/article/pii/S0168583X1301152X

Media:Zr-Alpha_IradDamageSimul_O_Trachenko_2001.pdf

Media:Zr-IrradDamage_Zarkadoula_2014.pdf

article on silicon damage from ions

https://www.sciencedirect.com/science/article/pii/S0168583X14002183

measuring ion damage to UO2 using Raman scattering

Appl. Phys. Lett. 100, 251914 (2012); https://doi.org/10.1063/1.4729588 File:Guijmbretiere APL 2012.pdf

Atom Probe Tomography

Atom Probe Tomography used to study Uranium oxide

Valderrama, B. et al. Investigation of material property influenced stoichiometric deviations as evidenced during UV laser-assisted atom probe tomography in fluorite oxides. Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms 359, 107–114 (2015).