TF EIM Chapt6

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Revision as of 04:21, 4 April 2011 by Foretony (talk | contribs) (→‎JFET)
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Field Effect Transistors (FET, JFET, MOSFET)

Properties

FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.

  • higher input impedance than bi-polar
  • less gain than bi-polar


JFET

JFET [math]\equiv[/math] Junction Field Effect Transistor


In a bi-polar transistor you have a depletion region with mixed charge carriers

TF EIM BipolarJunction.png TF EIM BipolarJunctionDiodeRep.png TF EIM BipolarJunctionCircuit.png
pnp bi-polar transistor Equivalence circuit Circuit diagram


In the Junction field effect transistor you have a single charge carrier with the minority charge carriers forming a choke point for the majority carrier current flow. It is similar to "pinching" a garden hose when water is flowing through it.


TF EIM JFETnchan.gif TF EIM nchanDiodeRep.jpg TF EIM JFETnchanCircuit.jpeg
JFET Equivalence circuit Circuit diagram

MOSFET

MOSFET[math] \equiv[/math] Metal-Oxide-Semiconductor Field Effect Transistor

Forest_Electronic_Instrumentation_and_Measurement