Difference between revisions of "TF EIM Chapt6"

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|[[File:TF_EIM_JFETnchan.gif| 200 px]] ||  [[File:TF_EIM_nchanDiodeRep.png| 200 px]] ||[[File:TF_EIM_JFETnchanCircuit.jpeg| 200 px]]  
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|[[File:TF_EIM_JFETnchan.gif| 200 px]] ||  [[File:TF_EIM_nchanDiodeRep.jpg| 200 px]] ||[[File:TF_EIM_JFETnchanCircuit.jpeg| 200 px]]  
 
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| JFET  || Equivalence circuit || Circuit diagram
 
| JFET  || Equivalence circuit || Circuit diagram

Revision as of 04:13, 4 April 2011

Field Effect Transistors (FET, JFET, MOSFET)

Properties

FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.

  • higher input impedance than bi-polar
  • less gain than bi-polar


JFET

JFET [math]\equiv[/math] Junction Field Effect Transistor


TF EIM BipolarJunction.png TF EIM BipolarJunctionDiodeRep.png TF EIM BipolarJunctionCircuit.png
pnp bi-polar transistor Equivalence circuit Circuit diagram


TF EIM JFETnchan.gif TF EIM nchanDiodeRep.jpg TF EIM JFETnchanCircuit.jpeg
JFET Equivalence circuit Circuit diagram

MOSFET

MOSFET[math] \equiv[/math] Metal-Oxide-Semiconductor Field Effect Transistor

Forest_Electronic_Instrumentation_and_Measurement