IAC LeadFlourideCherenkovCrystalTests 5-09
http://clasweb.jlab.org/wiki/index.php/Hall_A_IAC_Tests
Previous Tests: IAC_LeadFlourideCherenkovCrystalTests
Run Plan
Summary
| Task | Time Budget |
| Beam setup | 0.5 days |
| Testing 20 new blocks | 2.5 days |
| Silicon test | 1.0 day |
| Bleaching/Re-irradiation test | 0.5-1 day |
| Testing old blocks | 12 blocks/day |
- Accelerator Settings
| beam energy | 20 MeV |
| Rep Rate: | 30 Hz |
| I_peak: | 60 mA/pulse |
| pulse width: | 0.1 s (100 ns) |
Day 1
Beam setup & 2-3 hours
1) Shoot glass plate at 30cm from exit port
2) Temperature test with 1 old block
3) Irradiation batch 1:3 new blocks + 1 old ``reference block
4) Irradiation batch 2:4 new blocks
Bleaching of batch 2: 29 hours
5) Irradiation batch 3:4 new blocks
Day 2
Irradiation batch \#4:&4 new blocks\\ Irradiation batch \#5:&4 new blocks\\ Irradiation {\bf batch \#2}:&4 new blocks\\ Bleaching of batch \#2:&24 hours\\
Day 3
- Accelerator Settings
| beam energy | 20 MeV |
| Rep Rate: | 30 Hz |
| I_peak: | 60 mA/pulse |
| pulse width: | 0.1 s (100 ns) |
1.) Irradiate Silicon detector for 2-3 hours
Minimum ionizing particles deposit 0.19 MeV of energy /,J). If we want to irradiate particles/s, that makes J/s. Taking into account the strip size and the heat capacity of Si (19.8 J/mol/K), this makes a temperature variation of 0.045 K/min (negligeable).
2.) Irradiation PB crystal batch \#2 then Bleaching of batch #2 for 38 hours
Day 4
Irradiation batch \#6:&4 new blocks\\ Irradiation batch \#7:&4 new blocks\\ Irradiation batch \#8:&4 new blocks\\
Day 5
Irradiation {\bf batch \#2}\\ \multicolumn{2}{l}{Silicon test}\\ Day 6 -- Bleaching of batch \#2:&24h\\