Difference between revisions of "TF EIM Chapt6"
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Consider the following circuit | Consider the following circuit | ||
+ | |||
+ | Let | ||
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+ | <math>V_{DD} =</math> the drain driving voltage | ||
+ | |||
+ | R_D = resistor between the drain and V_{DD} | ||
+ | |||
+ | if | ||
+ | <math>\pho</math> = resistivity of the n-type semiconductor | ||
+ | |||
+ | then | ||
+ | |||
+ | :r = <math>\pho \frac{\ell}{A}</math> = resistance of the JFET | ||
+ | |||
+ | :<math>I_D = \frac{V_{DD}}{r+R_D}</math> | ||
=MOSFET= | =MOSFET= |
Revision as of 04:50, 5 April 2011
Field Effect Transistors (FET, JFET, MOSFET)
Properties
FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.
- higher input impedance than bi-polar
- less gain than bi-polar
JFET
JFET
Junction Field Effect Transistor
In a bi-polar transistor you have a depletion region with mixed charge carriers
pnp bi-polar transistor | Equivalence circuit | Circuit diagram |
In the Junction Field Effect Transistor you have a single charge carrier with the minority charge carriers forming a choke point for the majority carrier current flow. It is similar to "pinching" a garden hose when water is flowing through it.
JFET | Equivalence circuit | Circuit diagram |
The semiconductor material of the gate is the opposite of the channel. Here the n-p (or p-n) junction is between the gate and the channel.
The JFET operates by reverse biasing the gate-channel junction (diode) so the gate current doesn't flow in the direction indicated by the circuit diagram symbol. This means that the current through the gate is small (nAmps). As a result the input impedance looking into the gate is high (M
) for the equivalent circuit.The current junction rule is
for the Bi-Polar transistor
FET resistor
The FET acts like a resistor.
Consider the following circuit
Let
the drain driving voltage
R_D = resistor between the drain and V_{DD}
if
= resistivity of the n-type semiconductorthen
- r = = resistance of the JFET
MOSFET
MOSFET
Metal-Oxide-Semiconductor Field Effect Transistor