TF EIM Chapt6: Difference between revisions
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| JFET || Equivalence circuit || Circuit diagram | | JFET || Equivalence circuit || Circuit diagram | ||
Revision as of 04:13, 4 April 2011
Field Effect Transistors (FET, JFET, MOSFET)
Properties
FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.
- higher input impedance than bi-polar
- less gain than bi-polar
JFET
JFET [math]\displaystyle{ \equiv }[/math] Junction Field Effect Transistor
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| pnp bi-polar transistor | Equivalence circuit | Circuit diagram |
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| JFET | Equivalence circuit | Circuit diagram |
MOSFET
MOSFET[math]\displaystyle{ \equiv }[/math] Metal-Oxide-Semiconductor Field Effect Transistor