TF EIM Chapt6: Difference between revisions

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The semiconductor material of the gate is the opposite of the channel.  Here the n-p (or p-n) junction is between the gate and the channel. 
The JFET operates by reverse biasing the gate-channel junction (diode) so the gate current doesn't flow in the direction indicated by the circuit diagram symbol.


=MOSFET=
=MOSFET=

Revision as of 02:31, 5 April 2011

Field Effect Transistors (FET, JFET, MOSFET)

Properties

FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.

  • higher input impedance than bi-polar
  • less gain than bi-polar


JFET

JFET [math]\displaystyle{ \equiv }[/math] Junction Field Effect Transistor


In a bi-polar transistor you have a depletion region with mixed charge carriers

pnp bi-polar transistor Equivalence circuit Circuit diagram


In the Junction field effect transistor you have a single charge carrier with the minority charge carriers forming a choke point for the majority carrier current flow. It is similar to "pinching" a garden hose when water is flowing through it.


JFET Equivalence circuit Circuit diagram

The semiconductor material of the gate is the opposite of the channel. Here the n-p (or p-n) junction is between the gate and the channel.

The JFET operates by reverse biasing the gate-channel junction (diode) so the gate current doesn't flow in the direction indicated by the circuit diagram symbol.

MOSFET

MOSFET[math]\displaystyle{ \equiv }[/math] Metal-Oxide-Semiconductor Field Effect Transistor

Forest_Electronic_Instrumentation_and_Measurement