Difference between revisions of "TF EIM Chapt6"
Jump to navigation
Jump to search
(→JFET) |
(→JFET) |
||
Line 14: | Line 14: | ||
+ | In a bi-polar transistor you have a depletion region with mixed charge carriers | ||
{| border="3" cellpadding="20" cellspacing="0" | {| border="3" cellpadding="20" cellspacing="0" | ||
Line 21: | Line 22: | ||
|- | |- | ||
|} | |} | ||
+ | |||
+ | |||
+ | In the Junction field effect transistor you have a single charge carrier with the minority charge carriers forming a choke point for the majority carrier current flow. It is similar to "pinching" a garden hose when water is flowing through it. | ||
Revision as of 04:21, 4 April 2011
Field Effect Transistors (FET, JFET, MOSFET)
Properties
FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.
- higher input impedance than bi-polar
- less gain than bi-polar
JFET
JFET
Junction Field Effect Transistor
In a bi-polar transistor you have a depletion region with mixed charge carriers
![]() |
![]() |
![]() |
pnp bi-polar transistor | Equivalence circuit | Circuit diagram |
In the Junction field effect transistor you have a single charge carrier with the minority charge carriers forming a choke point for the majority carrier current flow. It is similar to "pinching" a garden hose when water is flowing through it.
![]() |
![]() |
![]() |
JFET | Equivalence circuit | Circuit diagram |
MOSFET
MOSFET
Metal-Oxide-Semiconductor Field Effect Transistor