Difference between revisions of "TF EIM Chapt6"
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|[[File:TF_EIM_BipolarJunction.png| 200 px]] || [[File:TF_EIM_BipolarJunctionDiodeRep.png| 200 px]] ||[[File:TF_EIM_BipolarJunctionCircuit.png| 200 px]] | |[[File:TF_EIM_BipolarJunction.png| 200 px]] || [[File:TF_EIM_BipolarJunctionDiodeRep.png| 200 px]] ||[[File:TF_EIM_BipolarJunctionCircuit.png| 200 px]] | ||
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| − | | | + | | pnp bi-polar transistor || Equivalence circuit || Circuit diagram |
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Revision as of 03:51, 4 April 2011
Field Effect Transistors (FET, JFET, MOSFET)
Properties
FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.
- higher input impedance than bi-polar
- less gain than bi-polar
JFET
JFET Junction Field Effect Transistor
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 |
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| pnp bi-polar transistor | Equivalence circuit | Circuit diagram |
MOSFET
MOSFET Metal-Oxide-Semiconductor Field Effect Transistor