Difference between revisions of "TF EIM Chapt6"
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(Replaced content with 'Field Effect Transistors (FET, JFET, MOSFET) FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge ca…') |
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Field Effect Transistors (FET, JFET, MOSFET) | Field Effect Transistors (FET, JFET, MOSFET) | ||
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| + | =Properties= | ||
FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole. | FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole. | ||
| − | + | *higher input impedance than bi-polar | |
| − | + | *less gain than bi-polar | |
| + | =JFET = | ||
| − | + | JFET <math>\equiv</math> Junction Field Effect Transistor | |
| − | + | =MOSFET= | |
| − | MOSFET \equiv Metal-Oxide-Semiconductor Field Effect Transistor | + | MOSFET<math> \equiv</math> Metal-Oxide-Semiconductor Field Effect Transistor |
[[Forest_Electronic_Instrumentation_and_Measurement]] | [[Forest_Electronic_Instrumentation_and_Measurement]] | ||
Revision as of 03:45, 4 April 2011
Field Effect Transistors (FET, JFET, MOSFET)
Properties
FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.
- higher input impedance than bi-polar
- less gain than bi-polar
JFET
JFET Junction Field Effect Transistor
MOSFET
MOSFET Metal-Oxide-Semiconductor Field Effect Transistor