IAC LeadFlourideCherenkovCrystalTests 5-09

http://clasweb.jlab.org/wiki/index.php/Hall_A_IAC_Tests

Previous Tests: IAC_LeadFlourideCherenkovCrystalTests

Run Plan

Summary

Task	Time Budget
Beam setup	0.5 days
Testing 20 new blocks	2.5 days
Silicon test	1.0 day
Bleaching/Re-irradiation test	0.5-1 day
Testing old blocks	12 blocks/day

Accelerator Settings

beam energy	20 MeV
Rep Rate:	30 Hz
I_peak:	60 mA/pulse
pulse width:	0.1 [math]\mu[/math]s (100 ns)

Day 0

Experiment Set-up Tasks:

1) Translator table -positioned in front of 0 degree exit port and manual operation (50,000/inch).

2) Faraday Cup - positioned at z = 30 cm, clipped (alligator to BNC & grounded), connected to cable C6, terminated into Channel 1 on the scope.

3) Green pick-up loop -Sits freely atop poly blocks in front of exit window with poly spacers between loop and exit window to prevent grounding, connected to cable C7, terminated into channel 3 (?) on scope (re-check this on morning of Day 1).

4) Fluke multimeter & camera set-up for real-time temperature monitoring - camera positioned and focused, connected via cable C5 to DAQ monitor.

5) Glass plate -unable to locate small size plate on Day 0, will look again morning of Day 1. Beam spot size measurement not crucial given properly operating beam scan software.

6) Beam scan -Brian is troubleshooting this software, will show Adrianne how to use the morning of Day 1.

Day 1

Beam setup & 2-3 hours

11:25 AM -

12:00 PM -

1) Shoot glass plate at 30cm from exit port

2) Temperature test with 1 old block

Accelerator Settings

beam energy	20 MeV
Rep Rate:	100 Hz
I_peak:	100 mA/pulse
pulse width:	0.1 [math]\mu[/math]s (100 ns)

23 deg C at start 33 max at finish -1 hour 40 min beam on.

3) Irradiation batch 1:3 new blocks + 1 old ``reference block

4) Irradiation batch 2:4 new blocks

Bleaching of batch 2: 29 hours

5) Irradiation batch 3:4 new blocks

Day 2

Irradiation batch \#4:&4 new blocks\\ Irradiation batch \#5:&4 new blocks\\ Irradiation {\bf batch \#2}:&4 new blocks\\ Bleaching of batch \#2:&24 hours\\

Day 3

Accelerator Settings

beam energy	20 MeV
Rep Rate:	30 Hz
I_peak:	60 mA/pulse
pulse width:	0.1 [math]\mu[/math]s (100 ns)

1.) Irradiate Silicon detector for 2-3 hours

Minimum ionizing particles deposit 0.19 MeV of energy [math](3\cdot 10^{-14}[/math]/,J). If we want to irradiate [math]10^9/20[/math] particles/s, that makes [math]1.5\cdot 10^{-6}[/math]J/s. Taking into account the strip size and the heat capacity of Si (19.8 J/mol/K), this makes a temperature variation of 0.045 K/min (negligeable).

2.) Irradiation PB crystal batch \#2 then Bleaching of batch #2 for 38 hours

Day 4

Irradiation batch \#6:&4 new blocks\\ Irradiation batch \#7:&4 new blocks\\ Irradiation batch \#8:&4 new blocks\\

Day 5

Irradiation {\bf batch \#2}\\ \multicolumn{2}{l}{Silicon test}\\ Day 6 -- Bleaching of batch \#2:&24h\\

5/11/09

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