IAC LeadFlourideCherenkovCrystalTests 5-09

http://clasweb.jlab.org/wiki/index.php/Hall_A_IAC_Tests

Previous Tests: IAC_LeadFlourideCherenkovCrystalTests

Run Plan

Summary

Task	Time Budget
Beam setup	0.5 days
Testing 20 new blocks	2.5 days
Silicon test	1.0 day
Bleaching/Re-irradiation test	0.5-1 day
Testing old blocks	12 blocks/day

Accelerator Settings

beam energy	20 MeV
Rep Rate:	30 Hz
I_peak:	60 mA/pulse
pulse width:	0.1 [math]\mu[/math]s (100 ns)

Day 1

Beam setup & 2-3 hours\\ Irradiation batch \#1:&3 new blocks + 1 old ``reference block\\ Irradiation {\bf batch \#2}:&4 new blocks\\ Bleaching of batch \#2:&29 hours\\ Irradiation batch \#3:&4 new blocks\\

Day 2

Irradiation batch \#4:&4 new blocks\\ Irradiation batch \#5:&4 new blocks\\ Irradiation {\bf batch \#2}:&4 new blocks\\ Bleaching of batch \#2:&24 hours\\

Day 3

Accelerator Settings

beam energy	20 MeV
Rep Rate:	30 Hz
I_peak:	60 mA/pulse
pulse width:	0.1 [math]\mu[/math]s (100 ns)

1.) Irradiate Silicon detector for 2-3 hours

Minimum ionizing particles deposit 0.19 MeV of energy [math](3\cdot 10^{-14}[/math]/,J). If we want to irradiate [math]10^9/20[/math] particles/s, that makes [math]1.5\cdot 10^{-6}[/math]J/s. Taking into account the strip size and the heat capacity of Si (19.8 J/mol/K), this makes a temperature variation of 0.045 K/min (negligeable).

2.) Irradiation PB crystal batch \#2 then Bleaching of batch #2 for 38 hours

Day 4

Irradiation batch \#6:&4 new blocks\\ Irradiation batch \#7:&4 new blocks\\ Irradiation batch \#8:&4 new blocks\\

Day 5

Irradiation {\bf batch \#2}\\ \multicolumn{2}{l}{Silicon test}\\ Day 6 -- Bleaching of batch \#2:&24h\\

5/11/09

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