Difference between revisions of "Z-Pinch/X-Pinch worldwide Installations"
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*Xi'an, China, '''QiangGuang-1''': 1 MA, 50 ns | *Xi'an, China, '''QiangGuang-1''': 1 MA, 50 ns | ||
*Beijing, China, '''PPG-1''': 400 kA, 100 ns | *Beijing, China, '''PPG-1''': 400 kA, 100 ns | ||
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*TRINITI, Russia, '''ANGARA-5-1''': 4 MA, 100 ns [http://www.triniti.ru/Triniti_eng/Base1.html] | *TRINITI, Russia, '''ANGARA-5-1''': 4 MA, 100 ns [http://www.triniti.ru/Triniti_eng/Base1.html] | ||
*Institute of High Current Electronics, Tomsk, '''Compact submicrosecond, high current generator''': 650 kA, 390 ns | *Institute of High Current Electronics, Tomsk, '''Compact submicrosecond, high current generator''': 650 kA, 390 ns | ||
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==Small Compact Z-Pinch/X-Pinch worldwide Installations (<300 kA)== | ==Small Compact Z-Pinch/X-Pinch worldwide Installations (<300 kA)== | ||
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*Ecole Polytechnique, Palaiseau, France, '''LC''' 200 kA, 200 ns | *Ecole Polytechnique, Palaiseau, France, '''LC''' 200 kA, 200 ns | ||
*France?, '''PIAF''': 250 kA, 180 ns | *France?, '''PIAF''': 250 kA, 180 ns | ||
| + | *CIAE, China, '''Light II-A''': 200 kA | ||
| + | *Beijing, China, '''Table Top''': 100 kA, 60 ns, 2m x 1.1m x 1.2m | ||
*Institute of High Current Electronics, Tomsk, '''Compact Pulse Generator''': 300 kA, 200 ns, 70 kg | *Institute of High Current Electronics, Tomsk, '''Compact Pulse Generator''': 300 kA, 200 ns, 70 kg | ||
*P.N.Lebedev Institute, Moscow, '''Don''': 150 kA, 30 ns | *P.N.Lebedev Institute, Moscow, '''Don''': 150 kA, 30 ns | ||
*P.N.Lebedev Institute, Moscow, '''Bin''': 270 kA, 100 ns | *P.N.Lebedev Institute, Moscow, '''Bin''': 270 kA, 100 ns | ||
Revision as of 04:28, 7 March 2013
Fact: As of 2012 Fusion shot simulations at 60 to 70 million amperes are showing a 100 to 1000 fold return on input energy
Worldwide Installations able to produce ICF
- National_Ignition_Facility at the Lawrence Livermore National Laboratory [1]
- Laser_Megajoule in Bordeaux, France [2]
Huge Z-Pinch/X-Pinch worldwide Installations
- Sandia National Laboratories, Z machine (1996): 18 MA 100ns [3]
- Sandia National Laboratories, ZR (Refurbished) (2006): 27 MA, 95ns
- Sandia National Laboratories, future ZN (Z Neutron): 20 and 30 MJ per short
- Sandia National Laboratories, future Z-IFE (Z-inertial fusion energy): 70 MA, 1 PetaWatt
- Sandia National Laboratories, SATURN: 8 MA
- Naval Research Laboratory, Washington DC, USA, Gamble II: 1 MA, 100 ns
- Cornell University, COBRA: 1 MA, 95-180 ns [4]
- Cornell University, XP Pulser: 450 kA, 50 ns [5]
- University of Nevada, Zebra: 1MA, 100ns [6]
- University of Michigan, MAIZE: 1 MA, 100 ns [7]
- Florida A&M University, GePaST: 500 kA, 1.3 us
- Pontificia Universidad Católica de Chile, Llampüdkeñ: 400 kA, 250 ns
- Imperial College, London, MAGPIE: 1.4 MA, 240 ns [8]
- Xi'an, China, QiangGuang-1: 1 MA, 50 ns
- Beijing, China, PPG-1: 400 kA, 100 ns
- TRINITI, Russia, ANGARA-5-1: 4 MA, 100 ns [9]
- Institute of High Current Electronics, Tomsk, Compact submicrosecond, high current generator: 650 kA, 390 ns
Small Compact Z-Pinch/X-Pinch worldwide Installations (<300 kA)
- University of California, San Diego, GenASIS: 210 kA, 150 ns [10]
- University of California, San Diego: X-Pinch Pulser: 80 kA, 50 ns [11]
- Pontificia Universidad Católica de Chile, GEPOPU: 180 kA, 120 ns
- Imperial College, London: 320 kA, 1.2 us
- Imperial College, London: Table-top X-pinch: 40 kA, 30 ns
- Ecole Polytechnique, Palaiseau, France, LC 200 kA, 200 ns
- France?, PIAF: 250 kA, 180 ns
- CIAE, China, Light II-A: 200 kA
- Beijing, China, Table Top: 100 kA, 60 ns, 2m x 1.1m x 1.2m
- Institute of High Current Electronics, Tomsk, Compact Pulse Generator: 300 kA, 200 ns, 70 kg
- P.N.Lebedev Institute, Moscow, Don: 150 kA, 30 ns
- P.N.Lebedev Institute, Moscow, Bin: 270 kA, 100 ns