Difference between revisions of "TF EIM Chapt6"
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{| border="3" cellpadding="20" cellspacing="0" | {| border="3" cellpadding="20" cellspacing="0" | ||
| − | |[[File:TF_EIM_BipolarJunction.png| 200 px]] || | + | |[[File:TF_EIM_BipolarJunction.png| 200 px]] || [[File:TF_EIM_BipolarJunctionDiodeRep.png| 200 px]] ||[[File:TF_EIM_BipolarJunctionCircuit.png| 200 px]] |
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| The n-p junction. The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion || the potential | | The n-p junction. The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion || the potential | ||
Revision as of 03:50, 4 April 2011
Field Effect Transistors (FET, JFET, MOSFET)
Properties
FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.
- higher input impedance than bi-polar
- less gain than bi-polar
JFET
JFET Junction Field Effect Transistor
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 |
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| The n-p junction. The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion | the potential |
MOSFET
MOSFET Metal-Oxide-Semiconductor Field Effect Transistor