Difference between revisions of "TF EIM Chapt6"

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|[[File:TF_EIM_BipolarJunction.png| 200 px]] || [[File:TF_EIM_pnpBipTran.png| 200 px]] || [[File:TF_EIM_BipolarJunctionDiodeRep.png| 200 px]] ||[[File:TF_EIM_BipolarJunctionCircuit.png| 200 px]]  
| The n-p  junction.  The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion || the potential
 
|-
 
|[[File:TF_EIM_BipolarJunction.png| 200 px]][[File:TF_EIM_pnpBipTran.png| 200 px]] [[File:TF_EIM_BipolarJunctionDiodeRep.png| 200 px]] [[File:TF_EIM_BipolarJunctionCircuit.png| 200 px]] ||
 
 
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| The n-p  junction.  The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion || the potential
 
| The n-p  junction.  The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion || the potential

Revision as of 03:50, 4 April 2011

Field Effect Transistors (FET, JFET, MOSFET)

Properties

FETs differ from the bipolar transistors in the las chapter in that the current from a FET is only due to the majority charge carriers in the semiconductor while bi-polar transistors current is produced from both carrier types; electron and hole.

  • higher input impedance than bi-polar
  • less gain than bi-polar


JFET

JFET [math]\equiv[/math] Junction Field Effect Transistor


TF EIM BipolarJunction.png TF EIM pnpBipTran.png TF EIM BipolarJunctionDiodeRep.png TF EIM BipolarJunctionCircuit.png
The n-p junction. The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion the potential

MOSFET

MOSFET[math] \equiv[/math] Metal-Oxide-Semiconductor Field Effect Transistor

Forest_Electronic_Instrumentation_and_Measurement