Difference between revisions of "TF EIMLab13 Writeup"

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{| border="1"  |cellpadding="20" cellspacing="0  
 
{| border="1"  |cellpadding="20" cellspacing="0  
 
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|V_{CC} || V_B || V_ E || R_E || R_B || I_E || I_B
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|V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B
 
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|mV || mV || V || mV || \Omega || k\Omega|| mA|| \muA
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|0.1 ||0.6 || || || 101 ||490 || || ||  
 
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4.) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A.  Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out
 
4.) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A.  Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out
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{| border="1"  |cellpadding="20" cellspacing="0
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|V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B
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|-
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|mV || mV || V || mV || \Omega || k\Omega|| mA|| \muA
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|-
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|0.1 ||0.6 || || || 101 ||290 || || ||
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|0.1 ||0.6 || || || 101 ||100 || || ||
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5.) Graph <math>I_C</math> -vs- <math>V_{CE}</math> for each value of <math>I_B</math> and <math>V_{CC}</math> above. (40 pnts)
 
5.) Graph <math>I_C</math> -vs- <math>V_{CE}</math> for each value of <math>I_B</math> and <math>V_{CC}</math> above. (40 pnts)

Revision as of 23:59, 8 March 2011

DC Bipolar Transistor Curves


Media:2N3906.pdf

2N3906 PinOuts.png

Transistor circuit

1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.


Value Description
Collector-Base breakdown voltage
Emitter-Base Breakdown Voltage
Maximum Collector Voltage
Maximum Collector Current
Transistor Power rating([math]P_{Max}[/math])
DC current gain [math]h_{FE}( I_C, V_{CE})[/math]


2.) Construct the circuit below according to the type of transistor you have.

TF EIM Lab13 Circuit.png


Let R_E = 100 \Omega.

V_{CC} = variable power supply

V_{BE}= 1V.

I_B = 2 \mu A = 1V/500 k \Omega

= 5 \mu A = 1V/200 k \Omega
= 10 \mu A = 1V/100 k \Omega

3.) Measure the emitter current [math]I_E[/math] for several values of [math]V_{CE}[/math] by changing [math]V_{CC}[/math] such that the base current [math]I_B = 2 \mu[/math] A is constant. [math]I_B \approx \frac{V_{bb}-V_{BE}}{R_B}[/math]


V_{CC} V_B V_{BB} V_ E R_E R_B I_E I_B
mV mV V mV \Omega k\Omega mA \muA
0.1 0.6 101 490


4.) Repeat the previous measurements for [math]I_B \approx 5 \mbox{ and } 10 \mu[/math] A. Remember to keep [math]I_CV_{CE} \lt P_{max}[/math] so the transistor doesn't burn out


V_{CC} V_B V_{BB} V_ E R_E R_B I_E I_B
mV mV V mV \Omega k\Omega mA \muA
0.1 0.6 101 290
0.1 0.6 101 100


5.) Graph [math]I_C[/math] -vs- [math]V_{CE}[/math] for each value of [math]I_B[/math] and [math]V_{CC}[/math] above. (40 pnts)

6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)

Questions

  1. Compare your measured value of [math]h_{FE}[/math] or [math]\beta[/math] for the transistor to the spec sheet? (10 pnts)
  2. What is [math]\alpha[/math] for the transistor?(10 pnts)
  3. The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
  4. For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
  5. For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)


Forest_Electronic_Instrumentation_and_Measurement