Difference between revisions of "Lab 17 RS"

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| Zero-Gate-Voltage Drain Current ||<math> I_{DSS}</math> || 2.0 || 20 || mAdc
 
| Zero-Gate-Voltage Drain Current ||<math> I_{DSS}</math> || 2.0 || 20 || mAdc
 
|-
 
|-
| || <math>V_{GS(off)}</math> || || ||  
+
| Gate-Source Cutoff Voltage|| <math>V_{GS(off)}</math> || - || -8.0 || Vdc
 
|-
 
|-
 
| || <math>P_{max}</math> || || ||  
 
| || <math>P_{max}</math> || || ||  

Revision as of 16:24, 6 April 2011

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The JFET (Junction Field Effect Transistor n-channel)


File:JFET MPF102 DataSheet.pdf

JFET MPF102 Pinouts.png


1.) Complete the table below for the JFET.


Characteristic Symbol Min Max Unit
Zero-Gate-Voltage Drain Current [math] I_{DSS}[/math] 2.0 20 mAdc
Gate-Source Cutoff Voltage [math]V_{GS(off)}[/math] - -8.0 Vdc
[math]P_{max}[/math]
[math]R_G[/math] 3.3 M[math]\Omega[/math]
[math]R_D[/math]
[math]y_{fs}[/math]
[math]y_{is}[/math]
[math]y_{os}[/math]


2.)Construct the JFET circuit below.

TF EIM Lab17Circuit.png

3.)Plot measurements of [math]I_D[/math] -vs- [math]V_{DS}[/math] by varying [math]V_{dd}[/math] for [math]\left | V_{GS}\right |[/math] = 0, 0.5, 1.0, 1.5 V. (40 pnts)

4.)Plot[math] I_D[/math] -vs- [math]V_{GS}[/math] (30 pnts)

5.)Calculate [math]y_{fs}[/math] for your JFET (20 pnts)

Question

  1. Does [math]y_{fs}[/math] depend on[math] I_D[/math]? (10 pnts)



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