Lab 13 RS

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DC Bipolar Transistor Curves

Data sheet for transistors.

Media:2N3904.pdfMedia:2N3906.pdf

Using 2N3904 is more srtaight forward in this lab.

Transistor circuit

1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.

Value	Description
[math]V_{(BR)CEO} = 40\ V[/math]	Collector-Base breakdown voltage
[math]V_{(BR)EBO} = 6\ V[/math]	Emitter-Base Breakdown Voltage
[math]V_{(BR)CEO} = 40\ V[/math]	Maximum Collector-Emitter Voltage
[math]V_{(BR)CBO} = 60\ V[/math]	Maximum Collector-Emitter Voltage
[math]I_C = 200\ mA[/math]	Maximum Collector Current - Continuous
[math]P = 625\ mW[/math]	Transistor Power rating([math]P_{Max}[/math])
[math]h_{FE}\ min \ [/math]	[math]h_{FE}\ max \ [/math]	[math]I_C=0.1\ mA[/math], [math]V_{CE}=1\ V[/math]
[math]40\ min \ [/math]	[math]I_C=0.1\ mA[/math], [math]V_{CE}=1\ V[/math]
[math]70\ min \ [/math]	300	[math]I_C=1\ mA[/math], [math]V_{CE}=1\ V[/math]
[math]100\ min \ [/math]	300	[math]I_C=10\ mA[/math], [math]V_{CE}=1\ V[/math]
[math]60\ min \ [/math]	300	[math]I_C=50\ mA[/math], [math]V_{CE}=1\ V[/math]
[math]30\ min \ [/math]	300	[math]I_C=100\ mA[/math], [math]V_{CE}=1\ V[/math]

2.) Construct the circuit below according to the type of transistor you have.

Let [math]R_E = 100 \Omega[/math].

[math]V_{CC} \lt 5 Volts[/math] variable power supply

[math]V_{BE}= 1V[/math].

Find the resistors you need to have

[math]I_B = 2 \mu A[/math] , [math]5 \mu A[/math] , and [math]10 \mu A[/math]

3.) Measure the emitter current [math]I_E[/math] for several values of [math]V_{CE}[/math] by changing [math]V_{CC}[/math] such that the base current [math]I_B = 2 \mu[/math] A is constant. [math]I_B \approx \frac{V_{BB}-V_{BE}}{R_B}[/math]

V_{CC}	V_B	V_{BB}	V_ {EC}	V_ E	R_E	R_B	I_E	I_B
mV	mV	V	mV	mV	[math]\Omega[/math]	k[math]\Omega[/math]	mA	\muA

4.) Repeat the previous measurements for [math]I_B \approx 5 \mbox{ and } 10 \mu[/math] A. Remember to keep [math]I_CV_{CE} \lt P_{max}[/math] so the transistor doesn't burn out

V_{CC}	V_B	V_{BB}	V_ {EC}	V_ E	R_E	R_B	I_E	I_B
mV	mV	V	mV	mV	[math]\Omega[/math]	k[math]\Omega[/math]	mA	\muA

5.) Graph [math]I_C[/math] -vs- [math]V_{CE}[/math] for each value of [math]I_B[/math] and [math]V_{CC}[/math] above. (40 pnts)

6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)

Questions

1. Compare your measured value of [math]h_{FE}[/math] or [math]\beta[/math] for the transistor to the spec sheet? (10 pnts)
2. What is [math]\alpha[/math] for the transistor?(10 pnts)
3. The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
4. For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
5. For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)

Extra credit

Measure the Base-Emmiter breakdown voltage. (10 pnts)

I expect to see a graph [math](I_{B} -vs- V_{BE} )[/math] and a linear fit which is similar to the forward biased diode curves. Compare your result to what is reported in the data sheet.

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