SiC-Diodes

Silicon Carbide Schottsky Diode for ion detection in vacuum

From http://etd.ohiolink.edu/view.cgi/Zelaski%20Alexandra%20R.pdf?osu1316486528

The silicon carbide used in this project had a low-doped (5x1014 atoms/cm3 of nitrogen) 21 micron thick epitaxial layer grown on top of a 300 micron thick bulk substrate with a nitrogen doping concentration of 1x1018 atoms/cm3. 100 nm of nickel, 10 nm of titanium, and 10 nm of gold were deposited, in that order, on the epitaxial side and annealed to form a Schottky contact. An ohmic contact was formed by annealing from 100 nm of nickel deposited on the substrate and annealed. The devices were characterized through IV curve measurements and then exposed to Am-241 alpha particles and high temperature while in vacuum.