TF EIMLab13 Writeup

From New IAC Wiki
Jump to navigation Jump to search

DC Bipolar Transistor Curves


Media:2N3906.pdf

2N3906 PinOuts.png

Transistor circuit

1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.


Value Description
Collector-Base breakdown voltage
Emitter-Base Breakdown Voltage
Maximum Collector Voltage
Maximum Collector Current
Transistor Power rating(PMax)
DC current gain hFE(IC,VCE)


2.) Construct the circuit below according to the type of transistor you have.

TF EIM Lab13 Circuit.png


Let R_E = 100 \Omega.

V_{CC} = variable power supply

V_{BE}= 5V.

3.) Measure the emitter current IE for several values of VCE by changing VCC such that the base current IB=2μ A is constant. IBVbbVBERB


V_{CC} V_B V_ E I_B I_E


4.) Repeat the previous measurements for IB5 and 10μ A. Remember to keep ICVCE<Pmax so the transistor doesn't burn out

5.) Graph IC -vs- VCE for each value of IB and VCC above. (40 pnts)

6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)

Questions

  1. Compare your measured value of hFE or β for the transistor to the spec sheet? (10 pnts)
  2. What is α for the transistor?(10 pnts)
  3. The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
  4. For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
  5. For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)


Forest_Electronic_Instrumentation_and_Measurement