TF EIM Chapt5

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Bipolar Transistor

The Bipolar transistor concept

From the last chapter we saw a p-n junction diode which had similar characteristic current-vs- voltage responses when biased either in the forward direction or backward.


TF EIM Diode V-vs-I curve.jpg


TF EIM ForwardBiased bottomhalfBipolar.jpg
The n-p junction. The depletion region is represented as the shaded square The potential
TF EIM ReverseBiased tophalfBipolar.jpg
The n-p junction. The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion the potential

Transistor Physical features

The three layers

A transistor has three semi-conductor payers. The three layers occur in the order of

p-n-p= holes-electron-hole

n-p-n= electron-hole-electron


The three layers are formed from a single crystal such that the doping of the single crystal defines the boundaries. The three layers are not "glued" together.

Base-Emmiter-Collector

Forest_Electronic_Instrumentation_and_Measurement