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3.)Plot measurements of <math>I_D</math> -vs- <math>V_{DS}</math> by varying <math>V_{dd}</math> for <math>\left | V_{GS}\right |</math> = 0, 0.5, 1.0, 1.5 V. (40 pnts) | 3.)Plot measurements of <math>I_D</math> -vs- <math>V_{DS}</math> by varying <math>V_{dd}</math> for <math>\left | V_{GS}\right |</math> = 0, 0.5, 1.0, 1.5 V. (40 pnts) | ||
4.)Plot<math> I_D</math> -vs- <math>V_{GS}</math> (30 pnts) | 4.)Plot <math> I_D</math> -vs- <math>V_{GS}</math> (30 pnts) | ||
5.)Calculate <math>y_{fs}</math> for your JFET (20 pnts) | 5.)Calculate <math>y_{fs}</math> for your JFET (20 pnts) | ||
Revision as of 16:26, 6 April 2011
The JFET (Junction Field Effect Transistor n-channel)
File:JFET MPF102 DataSheet.pdf
1.) Complete the table below for the JFET.
| Characteristic | Symbol | Min | Max | Unit |
| Zero-Gate-Voltage Drain Current | [math]\displaystyle{ I_{DSS} }[/math] | 2.0 | 20 | mAdc |
| Gate-Source Cutoff Voltage | [math]\displaystyle{ V_{GS(off)} }[/math] | - | -8.0 | Vdc |
| [math]\displaystyle{ P_{max} }[/math] | ||||
| [math]\displaystyle{ R_G }[/math] | 3.3 M[math]\displaystyle{ \Omega }[/math] | |||
| [math]\displaystyle{ R_D }[/math] | ||||
| [math]\displaystyle{ y_{fs} }[/math] | ||||
| [math]\displaystyle{ y_{is} }[/math] | ||||
| [math]\displaystyle{ y_{os} }[/math] |
2.)Construct the JFET circuit below.
3.)Plot measurements of [math]\displaystyle{ I_D }[/math] -vs- [math]\displaystyle{ V_{DS} }[/math] by varying [math]\displaystyle{ V_{dd} }[/math] for [math]\displaystyle{ \left | V_{GS}\right | }[/math] = 0, 0.5, 1.0, 1.5 V. (40 pnts)
4.)Plot [math]\displaystyle{ I_D }[/math] -vs- [math]\displaystyle{ V_{GS} }[/math] (30 pnts)
5.)Calculate [math]\displaystyle{ y_{fs} }[/math] for your JFET (20 pnts)
Question
- Does [math]\displaystyle{ y_{fs} }[/math] depend on[math]\displaystyle{ I_D }[/math]? (10 pnts)
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