Difference between revisions of "Lab 13 TF EIM"

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2.) Construct the circuit below according to the type of transistor you have.
 
2.) Construct the circuit below according to the type of transistor you have.
 +
 
3.) Measure the emitter current I_E for several values of V_{CE} by changing V_{CC} such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{bb}-V_{BE}}{R_B}</math>
 
3.) Measure the emitter current I_E for several values of V_{CE} by changing V_{CC} such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{bb}-V_{BE}}{R_B}</math>
 +
 
4.) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A.  Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out
 
4.) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A.  Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out
 +
 
5.) Graph <math>I_C</math> -vs- <math>V_{CE}</math> for each value of <math>I_B</math> and <math>V_{CC}</math> above. (40 pnts)
 
5.) Graph <math>I_C</math> -vs- <math>V_{CE}</math> for each value of <math>I_B</math> and <math>V_{CC}</math> above. (40 pnts)
 +
 
6.) Overlay points from the transistor's data sheet..(10 pnts)
 
6.) Overlay points from the transistor's data sheet..(10 pnts)
  

Revision as of 05:37, 8 March 2011

DC Transistor Curves


Media:2N3906.pdf

2N3906 PinOuts.png

Transistor circuit

1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.


Value Description
Collector-Base breakdown voltage
Emitter-Base Breakdown Voltage
Maximum Collector Voltage
Maximum Collector Current
Transistor Power rating([math]P_{Max}[/math])
DC current gain [math]h_{FE}( I_C, V_{CE})[/math]


2.) Construct the circuit below according to the type of transistor you have.

3.) Measure the emitter current I_E for several values of V_{CE} by changing V_{CC} such that the base current [math]I_B = 2 \mu[/math] A is constant. [math]I_B \approx \frac{V_{bb}-V_{BE}}{R_B}[/math]

4.) Repeat the previous measurements for [math]I_B \approx 5 \mbox{ and } 10 \mu[/math] A. Remember to keep [math]I_CV_{CE} \lt P_{max}[/math] so the transistor doesn't burn out

5.) Graph [math]I_C[/math] -vs- [math]V_{CE}[/math] for each value of [math]I_B[/math] and [math]V_{CC}[/math] above. (40 pnts)

6.) Overlay points from the transistor's data sheet..(10 pnts)

Questions

  1. What is [math]h_{FE}[/math] or [math]\beta[/math] for the transistor? (10 pnts)
  2. What is [math]\alpha[/math] for the transistor?(10 pnts)
  3. The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
  4. For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
  5. For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)


Forest_Electronic_Instrumentation_and_Measurement