Difference between revisions of "Z-Pinch/X-Pinch worldwide Installations"
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Revision as of 23:10, 6 March 2013
Fact: As of 2012 Fusion shot simulations at 60 to 70 million amperes are showing a 100 to 1000 fold return on input energy
Worldwide Installations able to produce ICF
- National_Ignition_Facility at the Lawrence Livermore National Laboratory [1]
- Laser_Megajoule in Bordeaux, France [2]
Z-Pinch/X-Pinch worldwide Installations
- Sandia National Laboratories, Z machine (1996), 18 MA 100ns [3]
- Sandia National Laboratories, ZR (Refurbished) (2006), 27 MA, 95ns
- Sandia National Laboratories, future ZN (Z Neutron), 20 and 30 MJ per short
- Sandia National Laboratories, future Z-IFE (Z-inertial fusion energy), 70 MA, 1 PetaWatt
- Sandia National Laboratories, SATURN, 8 MA
- Naval Research Laboratory, Washington DC, USA: Gamble II, 1 MA, 100 ns
- Cornell University, USA: COBRA, 1 MA, 95-180 ns [4]
- Cornell University, USA: XP Pulser, 450 kA, 50 ns [5]
- Cornell University, USA: LION, 280 - 470 kA, 80 ns
- University of Nevada, Reno: Zebra, 1MA, 100ns [6]
- University of California, San Diego: GenASIS, 210 kA, 150 ns [7]
- University of California, San Diego: X-Pinch Pulser, 80 kA, 50 ns [8]
- University of Michigan, USA: MAIZE, 1 MA, 100 ns [9]
- Florida A&M University, Tallahassee, FL, USA: 500 kA, 1.3 us
- Pontificia Universidad Católica de Chile: Llampüdkeñ, 400 kA, 250 ns
- Pontificia Universidad Católica de Chile: GEPOPU, 180 kA, 120 ns
- Imperial College, London: MAGPIE, 1.4 MA, 240 ns [10]
- Imperial College, London: 320 kA, 1.2 us
- Imperial College, London: Table-top X-pinch, 40 kA, 30 ns
- Ecole Polytechnique, Palaiseau, France: LC, 200 kA, 200 ns
- France?: PIAF, 250 kA, 180 ns
- Xi'an, China: QiangGuang-1, 1 MA, 50 ns
- Beijing, China: PPG-1, 400 kA, 100 ns
- CIAE, China: Light II-A, 200 kA
- Beijing, China: Table Top, 100 kA, 60 ns, 2m x 1.1m x 1.2m
- TRINITI, Russia: ANGARA-5-1, 4 MA, 100 ns [11]
- Institute of High Current Electronics, Tomsk, Russia: Compact Pulse Generator, 300 kA, 200 ns, 70 kg
- Institute of High Current Electronics, Tomsk, Russia: Compact submicrosecond, high current generator, 650 kA, 390 ns
- P.N.Lebedev Institute, Moscow, Russia: Don, 150 kA, 30 ns
- P.N.Lebedev Institute, Moscow, Russia: Bin, 270 kA, 100 ns