Lab 17 RS

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The JFET (Junction Field Effect Transistor n-channel)

File:JFET MPF102 DataSheet.pdf

1). Complete the table below for the JFET.

Characteristic	Symbol	Min	Max	Unit
Zero-Gate-Voltage Drain Current	$I_{DSS}$	2.0	20	mAdc
Gate-Source Cutoff Voltage	$V_{GS(off)}$	-	-8.0	Vdc
	$P_{max}$
	$R_G$	3.3 M$\Omega$
	$R_D$	1.0 M$\Omega$
	$y_{fs}$
	$y_{is}$
	$y_{os}$

2.) Construct the JFET circuit below.

3.) Plot measurements of $I_D$ -vs- $V_{DS}$ by varying $V_{dd}$ for $\left | V_{GS}\right |$ = 0, 0.5, 1.0, 1.5 V. (40 pnts)

I have used the following resistors:

[math]R_G = (3.34 \pm 0.02)\ M\Omega[/math]
[math]R_D = (0.968 \pm 0.002)\ k\Omega[/math]

Below is the table with my measurements of voltages $V_{DS}$ and $V_{R_D}$ and calculation of the current $I_D$. Here I have used the meter to measure directly the voltage drop between the drain and source $V_{DS}$ and to measure the voltage drop on resistor $R_D$.

So my calculated current becomes:

[math]I_D = \frac{V_{R_D}}{R_D}[/math].

And below I have plotted four curves $I_D$ as function of $V_{DS}$ for four different values of $V_{GS}$

4.) Plot $I_D$ -vs- $V_{GS}$ (30 pnts)

For every measured $V_{GS}$ values I have picked up the current $I_D$ values in the middle of saturation region of each line as follow:

And below is my plot of $I_D$ -vs- $V_{GS}$:

Question

1. Does $y_{fs}$ depend on$I_D$? (10 pnts)

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