Difference between revisions of "TF EIMLab13 Writeup"
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<math>V_{BE}= 1V</math>. | <math>V_{BE}= 1V</math>. | ||
− | I_B = 2 \mu A = 1V/500 k \Omega | + | I_B = 2<math> \mu</math> A = 1V/500 k<math> \Omega</math> |
− | : = 5 \mu A = 1V/200 k \Omega | + | : = 5<math> \mu</math> A = 1V/200 k <math>\Omega</math> |
− | : = 10 \mu A = 1V/100 k \Omega | + | : = 10 <math>\mu A</math> = 1V/100 k <math>\Omega</math> |
− | 3.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{ | + | 3.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{BB}-V_{b}}{R_B}</math> |
+ | <math>R_{B} = 500 k \Omega</math> | ||
+ | |||
+ | <math>R_{E} = 101 \Omega</math> | ||
{| border="1" |cellpadding="20" cellspacing="0 | {| border="1" |cellpadding="20" cellspacing="0 | ||
|- | |- | ||
− | |V_{ | + | |<math>V_{BB} -V_B</math> || <math>I_B</math> || <math>V_{CC}</math> ||<math> V_ E</math> || <math>I_E</math> |
+ | |- | ||
+ | |mV || <math>\mu</math> A || V || mV || mA | ||
+ | |- | ||
+ | |1.007 || 2|| 0.0704 ||1.2 || | ||
+ | |- | ||
+ | |1.05 ||2 ||0.110 ||4.9 || | ||
+ | |- | ||
+ | |1.02 ||2 ||0.133 ||8.9 || | ||
+ | |- | ||
+ | |1.002 ||2 ||0.162 ||15.7 || | ||
+ | |- | ||
+ | | 1.002||2 ||0.184 ||21.1 || | ||
+ | |- | ||
+ | |1.026 ||2 ||0.2287 ||32.3 || | ||
|- | |- | ||
− | | | + | | 1.012||2 ||0.3157 || 39.5 || |
|- | |- | ||
− | | | + | |1.008 ||2 ||0.484 || 40.0|| |
|- | |- | ||
− | | || || || | + | | 1.008||2 ||1.023 || 40.3 |
|- | |- | ||
− | | || || || | + | |1.008 ||2 ||2.167 || 40.7 |
|- | |- | ||
− | | || || || | + | |1.008 ||2 ||2.960 || 40.8 |
|- | |- | ||
− | | || || || | + | |1.008 ||2 ||5.00 || 41.2 |
|- | |- | ||
− | + | | || || || | |
|} | |} | ||
Revision as of 22:24, 1 April 2015
DC Bipolar Transistor Curves
Data sheet for transistors.
Media:2N3904.pdfMedia:2N3906.pdf
Using 2N3904 is more straight forward in this lab.
Transistor circuit
1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.
Value | Description |
40 V | Collector-Base breakdown voltage |
6 V | Emitter-Base Breakdown Voltage |
40 | Maximum Collector Voltage |
200 mA | Maximum Collector Current |
625 mW | Transistor Power rating( | )
30 - 300 | DC current gain |
2.) Construct the circuit below according to the type of transistor you have.
Let .
variable power supply
.
I_B = 2
A = 1V/500 k- = 5 A = 1V/200 k
- = 10 = 1V/100 k
3.) Measure the emitter current
for several values of by changing such that the base current A is constant.
mV | A | V | mV | mA |
1.007 | 2 | 0.0704 | 1.2 | |
1.05 | 2 | 0.110 | 4.9 | |
1.02 | 2 | 0.133 | 8.9 | |
1.002 | 2 | 0.162 | 15.7 | |
1.002 | 2 | 0.184 | 21.1 | |
1.026 | 2 | 0.2287 | 32.3 | |
1.012 | 2 | 0.3157 | 39.5 | |
1.008 | 2 | 0.484 | 40.0 | |
1.008 | 2 | 1.023 | 40.3 | |
1.008 | 2 | 2.167 | 40.7 | |
1.008 | 2 | 2.960 | 40.8 | |
1.008 | 2 | 5.00 | 41.2 | |
4.) Repeat the previous measurements for
A. Remember to keep so the transistor doesn't burn out
V_{CC} | V_B | V_{BB} | V_ E | R_E | R_B | I_E | I_B | |
mV | mV | V | mV | \Omega | k\Omega | mA | \muA | |
0.1 | 0.6 | 101 | 290 | |||||
0.1 | 0.6 | 101 | 100 |
5.) Graph -vs- for each value of and above. (40 pnts)
6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)
Questions
- Compare your measured value of or for the transistor to the spec sheet? (10 pnts)
- What is for the transistor?(10 pnts)
- The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
- For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
- For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)