Difference between revisions of "TF EIMLab13 Writeup"

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<math>V_{BE}=  1V</math>.
 
<math>V_{BE}=  1V</math>.
  
I_B = 2 \mu A = 1V/500 k \Omega
+
I_B = 2<math> \mu</math> A = 1V/500 k<math> \Omega</math>
: = 5 \mu A = 1V/200 k \Omega
+
: = 5<math> \mu</math> A = 1V/200 k <math>\Omega</math>
: = 10 \mu A = 1V/100 k \Omega
+
: = 10 <math>\mu A</math> = 1V/100 k <math>\Omega</math>
  
3.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{bb}-V_{BE}}{R_B}</math>
+
3.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{BB}-V_{b}}{R_B}</math>
  
 +
<math>R_{B} = 500 k \Omega</math>
 +
 +
<math>R_{E} = 101 \Omega</math>
  
  
 
{| border="1"  |cellpadding="20" cellspacing="0  
 
{| border="1"  |cellpadding="20" cellspacing="0  
 
|-
 
|-
|V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B
+
|<math>V_{BB} -V_B</math> || <math>I_B</math> || <math>V_{CC}</math> ||<math> V_ E</math> ||  <math>I_E</math>
 +
|-
 +
|mV || <math>\mu</math> A || V || mV || mA
 +
|-
 +
|1.007 || 2||  0.0704 ||1.2 ||
 +
|-
 +
|1.05 ||2 ||0.110 ||4.9 ||
 +
|-
 +
|1.02 ||2 ||0.133 ||8.9 ||
 +
|-
 +
|1.002 ||2 ||0.162 ||15.7  ||
 +
|-
 +
| 1.002||2 ||0.184 ||21.1  ||
 +
|-
 +
|1.026 ||2 ||0.2287 ||32.3 ||
 
|-
 
|-
|mV || mV || mV || mV || \Omega || k\Omega|| mA|| \muA
+
| 1.012||2 ||0.3157 || 39.5 ||
 
|-
 
|-
|0.120 ||853/2 || 913/2|| || 101 ||92.7 || || ||  
+
|1.008 ||2 ||0.484 || 40.0||
 
|-
 
|-
| || || || ||
+
| 1.008||2 ||1.023 || 40.3
 
|-
 
|-
| || || || ||
+
|1.008 ||2 ||2.167 || 40.7
 
|-
 
|-
| || || || ||
+
|1.008 ||2 ||2.960 || 40.8
 
|-
 
|-
| || || || ||
+
|1.008 ||2 ||5.00 || 41.2
 
|-
 
|-
| || || || ||  
+
| || || ||  
 
|}
 
|}
  

Revision as of 22:24, 1 April 2015

DC Bipolar Transistor Curves

Data sheet for transistors.

Media:2N3904.pdfMedia:2N3906.pdf

2N3904 PinOuts.png2N3906 PinOuts.png


Using 2N3904 is more straight forward in this lab.

Transistor circuit

1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.


Value Description
40 V Collector-Base breakdown voltage
6 V Emitter-Base Breakdown Voltage
40 Maximum Collector Voltage
200 mA Maximum Collector Current
625 mW Transistor Power rating([math]P_{Max}[/math])
30 - 300 DC current gain [math]h_{FE}( I_C, V_{CE})[/math]


2.) Construct the circuit below according to the type of transistor you have.

TF EIM Lab13 Circuit.png


Let [math]R_E = 100 \Omega[/math].

[math]V_{CC} \lt 5 Volts[/math] variable power supply

[math]V_{BE}= 1V[/math].

I_B = 2[math] \mu[/math] A = 1V/500 k[math] \Omega[/math]

= 5[math] \mu[/math] A = 1V/200 k [math]\Omega[/math]
= 10 [math]\mu A[/math] = 1V/100 k [math]\Omega[/math]

3.) Measure the emitter current [math]I_E[/math] for several values of [math]V_{CE}[/math] by changing [math]V_{CC}[/math] such that the base current [math]I_B = 2 \mu[/math] A is constant. [math]I_B \approx \frac{V_{BB}-V_{b}}{R_B}[/math]

[math]R_{B} = 500 k \Omega[/math]

[math]R_{E} = 101 \Omega[/math]


[math]V_{BB} -V_B[/math] [math]I_B[/math] [math]V_{CC}[/math] [math] V_ E[/math] [math]I_E[/math]
mV [math]\mu[/math] A V mV mA
1.007 2 0.0704 1.2
1.05 2 0.110 4.9
1.02 2 0.133 8.9
1.002 2 0.162 15.7
1.002 2 0.184 21.1
1.026 2 0.2287 32.3
1.012 2 0.3157 39.5
1.008 2 0.484 40.0
1.008 2 1.023 40.3
1.008 2 2.167 40.7
1.008 2 2.960 40.8
1.008 2 5.00 41.2


4.) Repeat the previous measurements for [math]I_B \approx 5 \mbox{ and } 10 \mu[/math] A. Remember to keep [math]I_CV_{CE} \lt P_{max}[/math] so the transistor doesn't burn out


V_{CC} V_B V_{BB} V_ E R_E R_B I_E I_B
mV mV V mV \Omega k\Omega mA \muA
0.1 0.6 101 290
0.1 0.6 101 100


5.) Graph [math]I_C[/math] -vs- [math]V_{CE}[/math] for each value of [math]I_B[/math] and [math]V_{CC}[/math] above. (40 pnts)

6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)

Questions

  1. Compare your measured value of [math]h_{FE}[/math] or [math]\beta[/math] for the transistor to the spec sheet? (10 pnts)
  2. What is [math]\alpha[/math] for the transistor?(10 pnts)
  3. The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
  4. For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
  5. For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)


Forest_Electronic_Instrumentation_and_Measurement