Difference between revisions of "TF EIM Chapt5"
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{| border="3" cellpadding="20" cellspacing="0" | {| border="3" cellpadding="20" cellspacing="0" | ||
| − | |[[File:TF_EIM_ForwardBiased_bottomhalfBipolar.jpg| 200 px]] | + | |[[File:TF_EIM_ForwardBiased_bottomhalfBipolar.jpg| 200 px]] || |
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| − | | The n-p junction. The depletion region is represented as the shaded square | + | | The n-p junction. The depletion region is represented as the shaded square || The potential |
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| − | |[[File:TF_EIM_ReverseBiased_tophalfBipolar.jpg| 200 px]] | + | |[[File:TF_EIM_ReverseBiased_tophalfBipolar.jpg| 200 px]] || |
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| − | | The n-p junction. The depletion region is represented as the shaded square. | + | | The n-p junction. The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion || the potential |
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Revision as of 02:08, 6 March 2011
Bipolar Transistor
The Bipolar transistor concept
From the last chapter we saw a p-n junction diode which had similar characteristic current-vs- voltage responses when biased either in the forward direction or backward.
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| The n-p junction. The depletion region is represented as the shaded square | The potential |
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| The n-p junction. The depletion region is represented as the shaded square. Notice the depletion region (and E-field in that region) is larger than the forward biased n-p juntion | the potential |
Transistor Physical features
The three layers
A transistor has three semi-conductor payers. The three layers occur in the order of
p-n-p= holes-electron-hole
n-p-n= electron-hole-electron
The three layers are formed from a single crystal such that the doping of the single crystal defines the boundaries. The three layers are not "glued" together.