Lab 17 RS: Difference between revisions
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[https://wiki.iac.isu.edu/index.php/Electronics_RS Go Back to All Lab Reports] | |||
The JFET (Junction Field Effect Transistor n-channel) | The JFET (Junction Field Effect Transistor n-channel) | ||
| Line 8: | Line 11: | ||
1. | =1). Complete the table below for the JFET.= | ||
{| border="2" cellpadding="8" cellspacing="0" | {| border="2" cellpadding="8" cellspacing="0" | ||
|- | |- | ||
| | !scope="col" | Characteristic | ||
!scope="col" | Symbol | |||
!scope="col" | Min | |||
!scope="col" | Max | |||
!scope="col" | Unit | |||
|- | |- | ||
|<math> | | Zero-Gate-Voltage Drain Current ||<math> I_{DSS}</math> || 2.0 || 20 || mAdc | ||
|- | |- | ||
|<math> | | Gate-Source Cutoff Voltage || <math>V_{GS(off)}</math> || - || -8.0 || Vdc | ||
|- | |- | ||
|<math> | | Total Device Dissipation @ <math>T_A=25^oC</math> | ||
| <math>P_{max}</math> | |||
| colspan="2" | 350 | |||
| mW | |||
|- | |- | ||
|<math> | | Gait resistor | ||
| <math>R_G</math> | |||
| colspan="2" | 3.3 | |||
| M<math>\Omega</math> | |||
|- | |- | ||
|<math> | | Drain resistor | ||
| <math>R_D</math> | |||
| colspan="2" | 1.0 | |||
| k<math>\Omega</math> | |||
|- | |- | ||
|<math>y_{ | | Forward Transfer Admittance || <math>y_{fs}</math> || 2000 || 7500 || <math>\mu</math>mhos | ||
|- | |- | ||
|<math>y_{ | | Input Admittance || <math>y_{is}</math> || - || 800 || <math>\mu</math>mhos | ||
|- | |- | ||
| Output Conductance || <math>y_{os}</math> || - || 200 || <math>\mu</math>mhos | |||
|} | |} | ||
=2.) Construct the JFET circuit below.= | |||
[[File:TF_EIM_Lab17Circuit.png| 300 px]] | |||
=3.) Plot measurements of <math>I_D</math> -vs- <math>V_{DS}</math> by varying <math>V_{dd}</math> for <math>\left | V_{GS}\right |</math> = 0, 0.5, 1.0, 1.5 V. (40 pnts)= | |||
I have used the following resistors: | |||
<math>R_G = (3.34 \pm 0.02)\ M\Omega</math> | |||
<math>R_D = (0.968 \pm 0.002)\ k\Omega</math> | |||
Below is the table with my measurements of voltages <math>V_{DS}</math> and <math>V_{R_D}</math> and calculation of the current <math>I_D</math>. Here I have used the meter to measure directly the voltage drop between the drain and source <math>V_{DS}</math> and to measure the voltage drop on resistor <math>R_D</math>. | |||
So my calculated current becomes: | |||
<math>I_D = \frac{V_{R_D}}{R_D}</math>. | |||
[[File:Table01.png | 550 px]] | |||
[[File:Table02.png | 550 px]] | |||
[[File:Table03.png | 550 px]] | |||
[[File:Table04.png | 550 px]] | |||
And below I have plotted four curves <math>I_D</math> as function of <math>V_{DS}</math> for four different values of <math>V_{GS}</math> | |||
[[File:L17 id vs vgs.png | 800 px]] | |||
=4.) Plot <math> I_D</math> -vs- <math>V_{GS}</math> (30 pnts)= | |||
For every measured <math>V_{GS}</math> values I have picked up the current <math>I_D</math> values in the middle of saturation region of each line as follow: | |||
[[File:Table21.png | 500 px]] | |||
And below is my plot of <math> I_D</math> -vs- <math>V_{GS}</math>: | |||
[[File:L17 id vs vgs 21.png | 800 px]] | |||
=5.) Calculate <math>y_{fs}</math> for your JFET (20 pnts)= | |||
For common source configuration JFET: | |||
<math>y_{fs} \equiv \left ( \frac{\partial I_{out}}{\partial V_{in}} \right )_{V_{out}} = \left ( \frac{\partial I_D}{\partial V_{GS}} \right )_{V_{DS}}</math> | |||
So to calculate <math>y_{fs}</math> we need to know the functional dependence of <math>I_D(V_{GS})</math>. Lets approximate this function by line using my measurements and plot above: | |||
[[File: | [[File:L17 id vs vgs 22.png | 1000 px]] | ||
The line equation is: | |||
<math>I_D[mA] = (10.53 \pm 0.04)[mA] + (4.04 \pm 0.04)\cdot V_{GS}[V]</math> | |||
Also note that this line equation was obtained using about the same voltage <math>V_{DS}</math> in saturation region from my first measurements of <math>I_D</math> as function of <math>V_{DS}</math> for four different values of <math>V_{GS}</math>. So we can take the partial derivative of <math>I_D</math> with respect to <math>V_{GS}</math> using the line equation above. Finally, | |||
<math>y_{fs} \equiv \left ( \frac{\partial I_D}{\partial V_{GS}} \right )_{V_{DS}} = (4.04 \pm 0.04)\ \frac{mA}{V} = (4.04 \pm 0.04)\ mS</math> | |||
=Question= | =Question= | ||
==Does <math>y_{fs}</math> depend on <math>I_D</math>? (10 pnts)== | |||
No. As we can see from calculation above <math>y_{fs}</math> is constant and does not depend from <math>I_D</math>. That is true if we are working in saturation region where the functional dependence of <math>I_D</math> with respect to <math>V_{GS}</math> is line so | |||
<math>y_{fs} \equiv \left ( \frac{\partial I_D}{\partial V_{GS}} \right )_{V_{DS}} = const</math> | |||
If we are in active region of <math>I_D</math> as function of <math>V_{DS}</math> the functional form of <math>I_D</math> with respect to <math>V_{GS}</math> is not the line anymore and <math>y_{fs}</math> will depend on <math>I_D</math>. | |||
[[Forest_Electronic_Instrumentation_and_Measurement]] | [https://wiki.iac.isu.edu/index.php/Electronics_RS Go Back to All Lab Reports] [[Forest_Electronic_Instrumentation_and_Measurement]] | ||
Latest revision as of 16:41, 13 April 2011
The JFET (Junction Field Effect Transistor n-channel)
File:JFET MPF102 DataSheet.pdf
1). Complete the table below for the JFET.
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Zero-Gate-Voltage Drain Current | [math]\displaystyle{ I_{DSS} }[/math] | 2.0 | 20 | mAdc |
| Gate-Source Cutoff Voltage | [math]\displaystyle{ V_{GS(off)} }[/math] | - | -8.0 | Vdc |
| Total Device Dissipation @ [math]\displaystyle{ T_A=25^oC }[/math] | [math]\displaystyle{ P_{max} }[/math] | 350 | mW | |
| Gait resistor | [math]\displaystyle{ R_G }[/math] | 3.3 | M[math]\displaystyle{ \Omega }[/math] | |
| Drain resistor | [math]\displaystyle{ R_D }[/math] | 1.0 | k[math]\displaystyle{ \Omega }[/math] | |
| Forward Transfer Admittance | [math]\displaystyle{ y_{fs} }[/math] | 2000 | 7500 | [math]\displaystyle{ \mu }[/math]mhos |
| Input Admittance | [math]\displaystyle{ y_{is} }[/math] | - | 800 | [math]\displaystyle{ \mu }[/math]mhos |
| Output Conductance | [math]\displaystyle{ y_{os} }[/math] | - | 200 | [math]\displaystyle{ \mu }[/math]mhos |
2.) Construct the JFET circuit below.
3.) Plot measurements of [math]\displaystyle{ I_D }[/math] -vs- [math]\displaystyle{ V_{DS} }[/math] by varying [math]\displaystyle{ V_{dd} }[/math] for [math]\displaystyle{ \left | V_{GS}\right | }[/math] = 0, 0.5, 1.0, 1.5 V. (40 pnts)
I have used the following resistors:
[math]\displaystyle{ R_G = (3.34 \pm 0.02)\ M\Omega }[/math] [math]\displaystyle{ R_D = (0.968 \pm 0.002)\ k\Omega }[/math]
Below is the table with my measurements of voltages [math]\displaystyle{ V_{DS} }[/math] and [math]\displaystyle{ V_{R_D} }[/math] and calculation of the current [math]\displaystyle{ I_D }[/math]. Here I have used the meter to measure directly the voltage drop between the drain and source [math]\displaystyle{ V_{DS} }[/math] and to measure the voltage drop on resistor [math]\displaystyle{ R_D }[/math].
So my calculated current becomes:
[math]\displaystyle{ I_D = \frac{V_{R_D}}{R_D} }[/math].
And below I have plotted four curves [math]\displaystyle{ I_D }[/math] as function of [math]\displaystyle{ V_{DS} }[/math] for four different values of [math]\displaystyle{ V_{GS} }[/math]
4.) Plot [math]\displaystyle{ I_D }[/math] -vs- [math]\displaystyle{ V_{GS} }[/math] (30 pnts)
For every measured [math]\displaystyle{ V_{GS} }[/math] values I have picked up the current [math]\displaystyle{ I_D }[/math] values in the middle of saturation region of each line as follow:
And below is my plot of [math]\displaystyle{ I_D }[/math] -vs- [math]\displaystyle{ V_{GS} }[/math]:
5.) Calculate [math]\displaystyle{ y_{fs} }[/math] for your JFET (20 pnts)
For common source configuration JFET:
[math]\displaystyle{ y_{fs} \equiv \left ( \frac{\partial I_{out}}{\partial V_{in}} \right )_{V_{out}} = \left ( \frac{\partial I_D}{\partial V_{GS}} \right )_{V_{DS}} }[/math]
So to calculate [math]\displaystyle{ y_{fs} }[/math] we need to know the functional dependence of [math]\displaystyle{ I_D(V_{GS}) }[/math]. Lets approximate this function by line using my measurements and plot above:
The line equation is:
[math]\displaystyle{ I_D[mA] = (10.53 \pm 0.04)[mA] + (4.04 \pm 0.04)\cdot V_{GS}[V] }[/math]
Also note that this line equation was obtained using about the same voltage [math]\displaystyle{ V_{DS} }[/math] in saturation region from my first measurements of [math]\displaystyle{ I_D }[/math] as function of [math]\displaystyle{ V_{DS} }[/math] for four different values of [math]\displaystyle{ V_{GS} }[/math]. So we can take the partial derivative of [math]\displaystyle{ I_D }[/math] with respect to [math]\displaystyle{ V_{GS} }[/math] using the line equation above. Finally,
[math]\displaystyle{ y_{fs} \equiv \left ( \frac{\partial I_D}{\partial V_{GS}} \right )_{V_{DS}} = (4.04 \pm 0.04)\ \frac{mA}{V} = (4.04 \pm 0.04)\ mS }[/math]
Question
Does [math]\displaystyle{ y_{fs} }[/math] depend on [math]\displaystyle{ I_D }[/math]? (10 pnts)
No. As we can see from calculation above [math]\displaystyle{ y_{fs} }[/math] is constant and does not depend from [math]\displaystyle{ I_D }[/math]. That is true if we are working in saturation region where the functional dependence of [math]\displaystyle{ I_D }[/math] with respect to [math]\displaystyle{ V_{GS} }[/math] is line so
[math]\displaystyle{ y_{fs} \equiv \left ( \frac{\partial I_D}{\partial V_{GS}} \right )_{V_{DS}} = const }[/math]
If we are in active region of [math]\displaystyle{ I_D }[/math] as function of [math]\displaystyle{ V_{DS} }[/math] the functional form of [math]\displaystyle{ I_D }[/math] with respect to [math]\displaystyle{ V_{GS} }[/math] is not the line anymore and [math]\displaystyle{ y_{fs} }[/math] will depend on [math]\displaystyle{ I_D }[/math].
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