Difference between revisions of "Lab 13 TF EIM"
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− | |V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B | + | |V_{CC} || V_B || V_{BB} || V_ {EC} || V_ E || R_E || R_B || I_E || I_B |
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− | |mV || mV || V || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA | + | |mV || mV || V || mV || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA |
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− | |V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B | + | |V_{CC} || V_B || V_{BB} || V_ {EC} || V_ E || R_E || R_B || I_E || I_B |
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− | |mV || mV || V || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA | + | |mV || mV || V || mV || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA |
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#For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts) | #For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts) | ||
#For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts) | #For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts) | ||
+ | |||
+ | =Extra credit= | ||
+ | |||
+ | Measure the Base-Emmiter breakdown voltage. (10 pnts) | ||
+ | I expect to see a graph <math>(I_{B} -vs- V_{BE} )</math> and a linear fit which is similar to the forward biased diode curves. Compare your result to what is reported in the data sheet. | ||
[[Forest_Electronic_Instrumentation_and_Measurement]] | [[Forest_Electronic_Instrumentation_and_Measurement]] |
Latest revision as of 04:03, 9 March 2011
DC Bipolar Transistor Curves
Data sheet for transistors.
Media:2N3904.pdfMedia:2N3906.pdf
Using 2N3904 is more srtaight forward in this lab.
Transistor circuit
1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.
Value | Description |
Collector-Base breakdown voltage | |
Emitter-Base Breakdown Voltage | |
Maximum Collector Voltage | |
Maximum Collector Current | |
Transistor Power rating( | )|
DC current gain |
2.) Construct the circuit below according to the type of transistor you have.
Let .
variable power supply
.
Find the resistors you need to have
, , and
3.) Measure the emitter current
for several values of by changing such that the base current A is constant.
V_{CC} | V_B | V_{BB} | V_ {EC} | V_ E | R_E | R_B | I_E | I_B |
mV | mV | V | mV | mV | k | mA | \muA | |
4.) Repeat the previous measurements for
A. Remember to keep so the transistor doesn't burn outV_{CC} | V_B | V_{BB} | V_ {EC} | V_ E | R_E | R_B | I_E | I_B |
mV | mV | V | mV | mV | k | mA | \muA | |
5.) Graph
-vs- for each value of and above. (40 pnts)6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)
Questions
- Compare your measured value of or for the transistor to the spec sheet? (10 pnts)
- What is for the transistor?(10 pnts)
- The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
- For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
- For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)
Extra credit
Measure the Base-Emmiter breakdown voltage. (10 pnts)
I expect to see a graph and a linear fit which is similar to the forward biased diode curves. Compare your result to what is reported in the data sheet.