Z-Pinch/X-Pinch worldwide Installations

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Fact: As of 2012 Fusion shot simulations at 60 to 70 million amperes are showing a 100 to 1000 fold return on input energy

Worldwide Installations able to produce ICF

• National_Ignition_Facility at the Lawrence Livermore National Laboratory [1]
• Laser_Megajoule in Bordeaux, France [2]

Z-Pinch/X-Pinch worldwide Installations

• Sandia National Laboratories, Z machine (1996): 18 MA 100 ns [3]
• Sandia National Laboratories, ZR (Refurbished) (2006): 27 MA, 95 ns
• Sandia National Laboratories, future ZN (Z Neutron): 20 and 30 MJ per short
• Sandia National Laboratories, future Z-IFE (Z-inertial fusion energy): 70 MA, 1 PetaWatt

• 27 MA, 95 ns, ZR at Sandia National Laboratories, USA [4]
• 8 MA, SATURN at Sandia National Laboratories
• 4 MA, 100 ns, ANGARA-5-1 at TRINITI, Russia [5]
• 2.0 MA, 80 ns, QiangGuang-1 (LTD-based) at Institute of Northwest Nuclear Technology, Xi'an, China
• 1.5 MA, 300 nsec, Dense Z-pinch at Naval Research Laboratory, Washington DC, USA [6]
• 1.4 MA, 150 ns, MAGPIE at Imperial College, London [7]
• 1.2 MA, 90 ns, Zebra at University of Nevada, USA [8]
• 1 MA, 50 ns, Gamble II at Naval Research Laboratory, Washington DC, USA [9]
• 1 MA, 100 ns, COBRA at Cornell University, USA [10]
• 1 MA, 100 ns, MAIZE (LTD-based) at University of Michigan, USA [11]

• 650 kA, 390 ns, Compact submicrosecond, high current generator at Institute of High Current Electronics, Tomsk
• 500 kA, 1.3 us, CePaST X-Pinch System at Florida A&M University [12]
• 470 kA, 80 ns, LION at Cornell University
• 450 kA, 40 ns, XP Pulser at Cornell University [13]
• 400 kA, 260 ns, Llampüdkeñ at Pontificia Universidad Católica de Chile [14]
• 400 kA, 100 ns, PPG-1 at at Tsinghua University, Beijing, China
• 320 kA, 1.2 us, Imperial College, London

• 300 kA, 200 ns, Compact Pulse Power Generator (based on Low Inductance Capacitors) at Institute of High Current Electronics, Tomsk
• 300 kA, 200 ns, SPAS (based on Low Inductance Capacitors) at Lebedev Institute, Moscow
• 270 kA, 100 ns, Bin at Lebedev Institute, Moscow
• 250 kA, 150 ns, GenASIS (LTD-based cavity) at University of California, San Diego [15]
• 250 kA, 180 ns, PIAF (based on Low Inductance Capacitors) at Ecole Polytechnique, Palaiseau, France
• 200 kA, xxx ns, Light II-A at China
• 180 kA, 120 ns, GEPOPU at Pontificia Universidad Católica de Chile
• 150 kA, 30 ns, Don at Lebedev Institute, Moscow
• 100 kA, 60 ns, Table Top at Beijing, China
• 80 kA, 40 ns, X-Pinch Pulser at University of California, San Diego [16]