Difference between revisions of "Z-Pinch/X-Pinch worldwide Installations"

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*University of Michigan, '''MAIZE''': 1 MA, 100 ns [http://www-ners.engin.umich.edu/labs/plasma/Research/ZPinch.html]
 
*University of Michigan, '''MAIZE''': 1 MA, 100 ns [http://www-ners.engin.umich.edu/labs/plasma/Research/ZPinch.html]
 
*Florida A&M University, '''GePaST''': 500 kA, 1.3 us
 
*Florida A&M University, '''GePaST''': 500 kA, 1.3 us
−
 
−
 
 
*Pontificia Universidad Católica de Chile, '''Llampüdkeñ''': 400 kA, 250 ns
 
*Pontificia Universidad Católica de Chile, '''Llampüdkeñ''': 400 kA, 250 ns
−
*Pontificia Universidad Católica de Chile, '''GEPOPU''': 180 kA, 120 ns
 
  
  
 
*Imperial College, London, '''MAGPIE''': 1.4 MA, 240 ns [http://dorland.pp.ph.ic.ac.uk/magpie/index.html]
 
*Imperial College, London, '''MAGPIE''': 1.4 MA, 240 ns [http://dorland.pp.ph.ic.ac.uk/magpie/index.html]
−
*Imperial College, London: 320 kA, 1.2 us
 
−
*Imperial College, London: '''Table-top X-pinch''': 40 kA, 30 ns
 
−
*Ecole Polytechnique, Palaiseau, France, '''LC''' 200 kA, 200 ns
 
−
*France?, '''PIAF''': 250 kA, 180 ns
 
  
  
Line 44: Line 37:
  
 
*TRINITI, Russia, '''ANGARA-5-1''': 4 MA, 100 ns [http://www.triniti.ru/Triniti_eng/Base1.html]
 
*TRINITI, Russia, '''ANGARA-5-1''': 4 MA, 100 ns [http://www.triniti.ru/Triniti_eng/Base1.html]
−
*Institute of High Current Electronics, Tomsk, '''Compact Pulse Generator''':  300 kA, 200 ns, 70 kg
 
 
*Institute of High Current Electronics, Tomsk, '''Compact submicrosecond, high current generator''':  650 kA, 390 ns
 
*Institute of High Current Electronics, Tomsk, '''Compact submicrosecond, high current generator''':  650 kA, 390 ns
−
*P.N.Lebedev Institute, Moscow, '''Don''': 150 kA, 30 ns
 
−
*P.N.Lebedev Institute, Moscow, '''Bin''': 270 kA, 100 ns
 
  
−
==Small Compact Z-Pinch/X-Pinch worldwide Installations (<500 kA)==
+
==Small Compact Z-Pinch/X-Pinch worldwide Installations (<300 kA)==
  
−
*University of California, San Diego: GenASIS, 210 kA, 150 ns [http://fbeg.ucsd.edu/machines.shtml]
+
*University of California, San Diego, '''GenASIS''': 210 kA, 150 ns [http://fbeg.ucsd.edu/machines.shtml]
−
*University of California, San Diego: X-Pinch Pulser, 80 kA, 50 ns [http://fbeg.ucsd.edu/machines.shtml]
+
*University of California, San Diego: '''X-Pinch Pulser''': 80 kA, 50 ns [http://fbeg.ucsd.edu/machines.shtml]
−
*Florida A&M University, Tallahassee, FL, USA: 500 kA, 1.3 us
+
*Pontificia Universidad Católica de Chile, '''GEPOPU''': 180 kA, 120 ns
−
*Pontificia Universidad Católica de Chile: Llampüdkeñ, 400 kA, 250 ns
 
−
*Pontificia Universidad Católica de Chile: GEPOPU, 180 kA, 120 ns
 
 
*Imperial College, London: 320 kA, 1.2 us
 
*Imperial College, London: 320 kA, 1.2 us
−
*Imperial College, London: Table-top X-pinch, 40 kA, 30 ns
+
*Imperial College, London: '''Table-top X-pinch''': 40 kA, 30 ns
−
*Ecole Polytechnique, Palaiseau, France: LC, 200 kA, 200 ns
+
*Ecole Polytechnique, Palaiseau, France, '''LC''' 200 kA, 200 ns
−
*France?: PIAF, 250 kA, 180 ns
+
*France?, '''PIAF''': 250 kA, 180 ns
−
*Institute of High Current Electronics, Tomsk, Russia: Compact Pulse Generator, 300 kA, 200 ns, 70 kg
+
*Institute of High Current Electronics, Tomsk, '''Compact Pulse Generator''': 300 kA, 200 ns, 70 kg
−
*Institute of High Current Electronics, Tomsk, Russia: Compact submicrosecond, high current generator,  650 kA, 390 ns
+
*P.N.Lebedev Institute, Moscow, '''Don''': 150 kA, 30 ns
−
*P.N.Lebedev Institute, Moscow, Russia: Don, 150 kA, 30 ns
+
*P.N.Lebedev Institute, Moscow, '''Bin''': 270 kA, 100 ns
−
*P.N.Lebedev Institute, Moscow, Russia: Bin, 270 kA, 100 ns
 

Revision as of 04:27, 7 March 2013

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Fact: As of 2012 Fusion shot simulations at 60 to 70 million amperes are showing a 100 to 1000 fold return on input energy


Worldwide Installations able to produce ICF

  • National_Ignition_Facility at the Lawrence Livermore National Laboratory [1]
  • Laser_Megajoule in Bordeaux, France [2]


Huge Z-Pinch/X-Pinch worldwide Installations

  • Sandia National Laboratories, Z machine (1996): 18 MA 100ns [3]
  • Sandia National Laboratories, ZR (Refurbished) (2006): 27 MA, 95ns
  • Sandia National Laboratories, future ZN (Z Neutron): 20 and 30 MJ per short
  • Sandia National Laboratories, future Z-IFE (Z-inertial fusion energy): 70 MA, 1 PetaWatt
  • Sandia National Laboratories, SATURN: 8 MA
  • Naval Research Laboratory, Washington DC, USA, Gamble II: 1 MA, 100 ns


  • Cornell University, COBRA: 1 MA, 95-180 ns [4]
  • Cornell University, XP Pulser: 450 kA, 50 ns [5]
  • University of Nevada, Zebra: 1MA, 100ns [6]
  • University of Michigan, MAIZE: 1 MA, 100 ns [7]
  • Florida A&M University, GePaST: 500 kA, 1.3 us
  • Pontificia Universidad Católica de Chile, Llampüdkeñ: 400 kA, 250 ns


  • Imperial College, London, MAGPIE: 1.4 MA, 240 ns [8]


  • Xi'an, China, QiangGuang-1: 1 MA, 50 ns
  • Beijing, China, PPG-1: 400 kA, 100 ns
  • CIAE, China, Light II-A: 200 kA
  • Beijing, China, Table Top: 100 kA, 60 ns, 2m x 1.1m x 1.2m


  • TRINITI, Russia, ANGARA-5-1: 4 MA, 100 ns [9]
  • Institute of High Current Electronics, Tomsk, Compact submicrosecond, high current generator: 650 kA, 390 ns

Small Compact Z-Pinch/X-Pinch worldwide Installations (<300 kA)

  • University of California, San Diego, GenASIS: 210 kA, 150 ns [10]
  • University of California, San Diego: X-Pinch Pulser: 80 kA, 50 ns [11]
  • Pontificia Universidad Católica de Chile, GEPOPU: 180 kA, 120 ns
  • Imperial College, London: 320 kA, 1.2 us
  • Imperial College, London: Table-top X-pinch: 40 kA, 30 ns
  • Ecole Polytechnique, Palaiseau, France, LC 200 kA, 200 ns
  • France?, PIAF: 250 kA, 180 ns
  • Institute of High Current Electronics, Tomsk, Compact Pulse Generator: 300 kA, 200 ns, 70 kg
  • P.N.Lebedev Institute, Moscow, Don: 150 kA, 30 ns
  • P.N.Lebedev Institute, Moscow, Bin: 270 kA, 100 ns
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