Difference between revisions of "Lab 17 RS"

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{| border="2"  cellpadding="8" cellspacing="0"
 
{| border="2"  cellpadding="8" cellspacing="0"
|Characteristic ||  Symbol ||  
+
|Characteristic ||  Symbol || Min || Max || Unit
 
|-
 
|-
|<math> I_{DSS}</math> ||
+
| Zero-Gate-Voltage Drain Current ||<math> I_{DSS}</math> || 2.0 || 20 || mAdc
 
|-
 
|-
|<math>V_{GS(off)}</math> ||
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| || <math>V_{GS(off)}</math> ||  
 
|-
 
|-
|<math>P_{max}</math> ||
+
| || <math>P_{max}</math> ||
 
|-
 
|-
|<math>R_G</math> || 3.3 M<math>\Omega</math>
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| ||<math>R_G</math> || 3.3 M<math>\Omega</math>
 
|-
 
|-
|<math>R_D</math> ||  
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| ||<math>R_D</math> ||  
 
|-
 
|-
|<math>y_{fs}</math> ||  
+
| ||<math>y_{fs}</math> ||  
 
|-
 
|-
|<math>y_{is}</math> ||  
+
| ||<math>y_{is}</math> ||  
 
|-
 
|-
|<math>y_{os}</math> ||  
+
| ||<math>y_{os}</math> ||  
 
|-
 
|-
 
|}
 
|}

Revision as of 16:21, 6 April 2011

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The JFET (Junction Field Effect Transistor n-channel)


File:JFET MPF102 DataSheet.pdf

JFET MPF102 Pinouts.png


1.) Complete the table below for the JFET.


Characteristic Symbol Min Max Unit
Zero-Gate-Voltage Drain Current [math] I_{DSS}[/math] 2.0 20 mAdc
[math]V_{GS(off)}[/math]
[math]P_{max}[/math]
[math]R_G[/math] 3.3 M[math]\Omega[/math]
[math]R_D[/math]
[math]y_{fs}[/math]
[math]y_{is}[/math]
[math]y_{os}[/math]


2.)Construct the JFET circuit below.

TF EIM Lab17Circuit.png

3.)Plot measurements of [math]I_D[/math] -vs- [math]V_{DS}[/math] by varying [math]V_{dd}[/math] for [math]\left | V_{GS}\right |[/math] = 0, 0.5, 1.0, 1.5 V. (40 pnts)

4.)Plot[math] I_D[/math] -vs- [math]V_{GS}[/math] (30 pnts)

5.)Calculate [math]y_{fs}[/math] for your JFET (20 pnts)

Question

  1. Does [math]y_{fs}[/math] depend on[math] I_D[/math]? (10 pnts)



Go Back to All Lab Reports Forest_Electronic_Instrumentation_and_Measurement