Difference between revisions of "Lab 13 RS"
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!scope="row" |<math>R_{E}</math> | !scope="row" |<math>R_{E}</math> | ||
!scope="row" |<math>R_{B}</math> | !scope="row" |<math>R_{B}</math> | ||
− | !scope="row" |<math>I_{E}</math> | + | !scope="row" |<math>I_{E} = \frac{V_E}{R_E}</math> |
!scope="row" |<math>I_{B}</math> | !scope="row" |<math>I_{B}</math> | ||
|- | |- | ||
Line 115: | Line 115: | ||
|<math>1041.0\pm 2.0</math>||<math>600\pm 50</math>||<math>1.6\pm 0.05</math>||<math>30.0\pm 1</math>||<math>1000\pm 50</math>||<math>100\pm 0.5</math>||<math>494.7\pm 0.5</math> || || | |<math>1041.0\pm 2.0</math>||<math>600\pm 50</math>||<math>1.6\pm 0.05</math>||<math>30.0\pm 1</math>||<math>1000\pm 50</math>||<math>100\pm 0.5</math>||<math>494.7\pm 0.5</math> || || | ||
|} | |} | ||
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== Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A. Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out== | == Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A. Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out== |
Revision as of 05:11, 11 March 2011
DC Bipolar Transistor Curves
Data sheet for transistors.
Media:2N3904.pdfMedia:2N3906.pdf
Using 2N3904 is more srtaight forward in this lab.
Transistor circuit
Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.
I am going to use n-p-n transistor 2N3904. Below are some specifications from data shits for this type of transistor:
Value | Description | ||
---|---|---|---|
Collector-Base breakdown voltage | |||
Emitter-Base Breakdown Voltage | |||
Maximum Collector-Emitter Voltage | |||
Maximum Collector-Emitter Voltage | |||
Maximum Collector Current - Continuous | |||
Transistor Power rating( | )|||
, | |||
40 | 300 | , | |
70 | 300 | , | |
100 | 300 | , | |
60 | 300 | , | |
30 | 300 | , |
Construct the circuit below according to the type of transistor you have.
Let .
variable power supply
.
Find the resistors you need to have
, , and
By measurements I was able to find that
. So I am going to use this value. Also let picks up . So my current .Now to getI need to use To get I need to use To get I need to use
Measure the emitter current for several values of by changing such that the base current A is constant.
mV | mV | V | mV | mV | k | mA | ||
Repeat the previous measurements for A. Remember to keep so the transistor doesn't burn out
V_{CC} | V_B | V_{BB} | V_ {EC} | V_ E | R_E | R_B | I_E | I_B |
mV | mV | V | mV | mV | k | mA | \muA | |
5.) Graph
-vs- for each value of and above. (40 pnts)6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)
Questions
- Compare your measured value of or for the transistor to the spec sheet? (10 pnts)
- What is for the transistor?(10 pnts)
- The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
- For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
- For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)
Extra credit
Measure the Base-Emmiter breakdown voltage. (10 pnts)
I expect to see a graph and a linear fit which is similar to the forward biased diode curves. Compare your result to what is reported in the data sheet.
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