Difference between revisions of "Lab 13 TF EIM"
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<math>I_B = 2 \mu A</math> , <math>5 \mu A</math> , and <math>10 \mu A</math> | <math>I_B = 2 \mu A</math> , <math>5 \mu A</math> , and <math>10 \mu A</math> | ||
− | 3.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{ | + | 3.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{BB}-V_{BE}}{R_B}</math> |
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|V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B | |V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B | ||
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− | |mV || mV || V || mV || \Omega || k\Omega|| mA|| \muA | + | |mV || mV || V || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA |
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4.) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A. Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out | 4.) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A. Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out | ||
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{| border="1" |cellpadding="20" cellspacing="0 | {| border="1" |cellpadding="20" cellspacing="0 | ||
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|V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B | |V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B | ||
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− | |mV || mV || V || mV || \Omega || k\Omega|| mA|| \muA | + | |mV || mV || V || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA |
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Revision as of 01:50, 9 March 2011
DC Bipolar Transistor Curves
Data sheet for transistors.
Media:2N3904.pdfMedia:2N3906.pdf
Using 2N3904 is more srtaight forward in this lab.
Transistor circuit
1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.
Value | Description |
Collector-Base breakdown voltage | |
Emitter-Base Breakdown Voltage | |
Maximum Collector Voltage | |
Maximum Collector Current | |
Transistor Power rating( | )|
DC current gain |
2.) Construct the circuit below according to the type of transistor you have.
Let .
variable power supply
.
Find the resistors you need to have
, , and
3.) Measure the emitter current
for several values of by changing such that the base current A is constant.
V_{CC} | V_B | V_{BB} | V_ E | R_E | R_B | I_E | I_B |
mV | mV | V | mV | k | mA | \muA | |
4.) Repeat the previous measurements for
A. Remember to keep so the transistor doesn't burn outV_{CC} | V_B | V_{BB} | V_ E | R_E | R_B | I_E | I_B |
mV | mV | V | mV | k | mA | \muA | |
5.) Graph -vs- for each value of and above. (40 pnts)
6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)
Questions
- Compare your measured value of or for the transistor to the spec sheet? (10 pnts)
- What is for the transistor?(10 pnts)
- The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
- For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
- For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)