Difference between revisions of "TF EIMLab13 Writeup"
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− | |V_{CC} || V_B || V_ E || I_B || I_E | + | |V_{CC} || V_B || V_ E || R_E || I_B || I_E |
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Revision as of 23:01, 8 March 2011
DC Bipolar Transistor Curves
Transistor circuit
1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.
Value | Description |
Collector-Base breakdown voltage | |
Emitter-Base Breakdown Voltage | |
Maximum Collector Voltage | |
Maximum Collector Current | |
Transistor Power rating( | )|
DC current gain |
2.) Construct the circuit below according to the type of transistor you have.
Let R_E = 100 \Omega.
V_{CC} = variable power supply
V_{BE}= 5V.
3.) Measure the emitter current
for several values of by changing such that the base current A is constant.
V_{CC} | V_B | V_ E | R_E | I_B | I_E |
4.) Repeat the previous measurements for
A. Remember to keep so the transistor doesn't burn out5.) Graph
-vs- for each value of and above. (40 pnts)6.) Overlay points from the transistor's data sheet on the graph in part 5.).(10 pnts)
Questions
- Compare your measured value of or for the transistor to the spec sheet? (10 pnts)
- What is for the transistor?(10 pnts)
- The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
- For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
- For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)