Difference between revisions of "Lab 13 TF EIM"
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− | + | 2.) Construct the circuit below according to the type of transistor you have. | |
− | + | 3.) Measure the emitter current I_E for several values of V_{CE} by changing V_{CC} such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{bb}-V_{BE}}{R_B}</math> | |
− | + | 4.) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A. Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out | |
− | + | 5.) Graph <math>I_C</math> -vs- <math>V_{CE}</math> for each value of <math>I_B</math> and <math>V_{CC}</math> above. (40 pnts) | |
− | + | 6.) Overlay points from the transistor's data sheet..(10 pnts) | |
=Questions= | =Questions= |
Revision as of 05:37, 8 March 2011
DC Transistor Curves
Transistor circuit
1.) Identify the type (n-p-n or p-n-p) of transistor you are using and fill in the following specifications.
Value | Description |
Collector-Base breakdown voltage | |
Emitter-Base Breakdown Voltage | |
Maximum Collector Voltage | |
Maximum Collector Current | |
Transistor Power rating( | )|
DC current gain |
2.) Construct the circuit below according to the type of transistor you have. 3.) Measure the emitter current I_E for several values of V_{CE} by changing V_{CC} such that the base current
A is constant. 4.) Repeat the previous measurements for A. Remember to keep so the transistor doesn't burn out 5.) Graph -vs- for each value of and above. (40 pnts) 6.) Overlay points from the transistor's data sheet..(10 pnts)Questions
- What is or for the transistor? (10 pnts)
- What is for the transistor?(10 pnts)
- The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)
- For a transistor to conduct I_C the base-emitter junction must be ___________ biased.(10 pnts)
- For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)