Difference between revisions of "TF EIM Chapt5"
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| + | Bipolar Transistor | ||
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| + | =The Bipolar transistor concept= | ||
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| + | From the last chapter we saw a p-n junction diode which had similar characteristic current-vs- voltage responses when biased either in the forward direction or backward. | ||
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| + | =Transistor Physical features= | ||
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| + | ==The three layers== | ||
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| + | A transistor has three semi-conductor payers. The three layers occur in the order of | ||
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| + | p-n-p= holes-electron-hole | ||
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| + | n-p-n= electron-hole-electron | ||
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| + | The three layers are formed from a single crystal such that the doping of the single crystal defines the boundaries. The three layers are not "glued" together. | ||
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| + | == Base-Emmiter-Collector== | ||
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[[Forest_Electronic_Instrumentation_and_Measurement]] | [[Forest_Electronic_Instrumentation_and_Measurement]] | ||
Revision as of 01:31, 6 March 2011
Bipolar Transistor
The Bipolar transistor concept
From the last chapter we saw a p-n junction diode which had similar characteristic current-vs- voltage responses when biased either in the forward direction or backward.
Transistor Physical features
The three layers
A transistor has three semi-conductor payers. The three layers occur in the order of
p-n-p= holes-electron-hole
n-p-n= electron-hole-electron
The three layers are formed from a single crystal such that the doping of the single crystal defines the boundaries. The three layers are not "glued" together.