Difference between revisions of "CHIPS IAC Run 5-28-08"
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gate width between 400 and 800 ns | gate width between 400 and 800 ns | ||
| − | = Tune | + | = Tune 4 MeV electrons into Experimental Cell= |
| + | |||
| + | Optics elements 45Q2, Bend2, L90Q1m L90Q2 are after the tungsten converter. | ||
| + | |||
{| border="1" |cellpadding="20" cellspacing="0 | {| border="1" |cellpadding="20" cellspacing="0 | ||
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Revision as of 09:57, 28 May 2008
Delay from gun is about 400 ns gate width between 400 and 800 ns
Tune 4 MeV electrons into Experimental Cell
Optics elements 45Q2, Bend2, L90Q1m L90Q2 are after the tungsten converter.
| Device | setting |
| RS1 | -0.46 |
| RS2 | +0.77 |
| FS1 | -0.68 |
| FS2 | 0.00 |
| 0Q1 | +0.76 |
| 0Q2 | +0.94 |
| 45Q1 | +0.02 |
| 45Q2 | +1.37 |
| L90Q1 | -2.98 |
| L90Q2 | +0.98 |
| Bend1 | +1.42 |
| Bend2 | +10.66 |
| Gun HV | 20 kV |
| Grid | 4.84 |
| 802 | 13.2 kV |
| SOL1 | 0.00 |
| SOL2 | 8.59 |