Tony chapter 4 - Revision history

Shaproma: /* The P-N junction Diode/rectifier */

2011-02-16T17:17:09Z

The P-N junction Diode/rectifier

2011-02-16T17:16:32Z

Crystal Lattice

2011-02-16T17:12:57Z

2011-02-16T17:11:19Z

The P-N junction Diode/rectifier

2011-02-16T17:10:46Z

The P-N junction Diode/rectifier

2011-02-16T17:10:30Z

The P-N junction Diode/rectifier

2011-02-16T17:10:14Z

Fermi Function (F[E])

2011-02-16T17:10:00Z

Fermi Function (F[E])

2011-02-16T17:09:46Z

Crystal Lattice

2011-02-16T17:09:13Z

← Older revision		Revision as of 17:17, 16 February 2011
Line 181:		Line 181:
	The "depletion" region is located at the junction and is a place which has been "depleted" of mobile charge carriers. The ionized acceptor and donor impurity atoms are fixed in the crystal lattice at the junction.		The "depletion" region is located at the junction and is a place which has been "depleted" of mobile charge carriers. The ionized acceptor and donor impurity atoms are fixed in the crystal lattice at the junction.

−	[[File:TF_EIM_PotBarrier_p-n_junct.jpg \| ~~400~~ px]]	+	[[File:TF_EIM_PotBarrier_p-n_junct.jpg \| 500 px]]

@@ Line 16: / Line 16: @@
 {| border="3"  cellpadding="20" cellspacing="0"
-| [[File:TF_EIM_SimpleCubic.jpeg| 200 px]] || [[File:TF_EIM_BodyCentereCubic.jpeg| 200 px]] || [[File:TF_EIM_FaceCentereCubic.jpeg| 200 px]]
+| [[File:TF_EIM_SimpleCubic.jpeg| 150 px]] || [[File:TF_EIM_BodyCentereCubic.jpeg| 150 px]] || [[File:TF_EIM_FaceCentereCubic.jpeg| 150 px]]
 |-
 |(SC) Simple Cubic || (BCC) Body Centered Cubic|| (FCC) Face Centered Cubic
@@ Line 31: / Line 31: @@
-[[File:TF_EIM_Crystal_Cell_EnergyLevels.png| 400 px]]
+[[File:TF_EIM_Crystal_Cell_EnergyLevels.png| 350 px]]
 ;Notice

← Older revision		Revision as of 17:12, 16 February 2011
Line 1:		Line 1:
		+	[https://wiki.iac.isu.edu/index.php/Electronics_RS Go Back to All Lab Reports]
		+
	=Semiconductor physics=		=Semiconductor physics=

@@ Line 195: / Line 195: @@
 {| border="3"  cellpadding="20" cellspacing="0"
-|[[File:TF_EIM_ForwardBiased_n-p_EnergyLevel.gif | 400 ]]
+|[[File:TF_EIM_ForwardBiased_n-p_EnergyLevel.gif | 200 ]]
 |-
 |The above figure represents an n-p juntion biased in the forward directions.  Without the bias, the conduction band of the p-type material is higher in energy than that of the n-type material by an amount equal to the difference in their Fermi energies.  The applied forward biased voltage (V_B) raises the carriers in the n-type material from the fermi level up to the conduction band of the n-type material.  Thus electrons in the n-type material will flow over to the p-type material.  The current direction, by convention, will be from the p-type material to the n-type material.
@@ Line 203: / Line 203: @@
 If you try and push current in the opposite direction you have an even higher barrier (step potential) to overcome than in the forward direction.  There are only "holes" on the p-type side of the junction so electrons need to be "freed" by breaking covalent bonds on the p-type material side thereby creating 2 new charge carriers, one for the hole and one free to move to the n-type side.  The bond breaking potential is higher than the potential needed to overcome the difference in Fermi energies.
-[[File:TF_EIM_Diode_V-vs-I_curve.jpg| 200 px]]
+[[File:TF_EIM_Diode_V-vs-I_curve.jpg| 400 px]]
 [[Forest_Electronic_Instrumentation_and_Measurement]]

@@ Line 179: / Line 179: @@
 The "depletion" region is located at the junction and is a place which has been "depleted" of mobile charge carriers.  The ionized acceptor and donor impurity atoms are fixed in the crystal lattice at the junction.
-[[File:TF_EIM_PotBarrier_p-n_junct.jpg | 200 px]]
+[[File:TF_EIM_PotBarrier_p-n_junct.jpg | 400 px]]
@@ Line 195: / Line 195: @@
 {| border="3"  cellpadding="20" cellspacing="0"
-|[[File:TF_EIM_ForwardBiased_n-p_EnergyLevel.gif | 200 ]]
+|[[File:TF_EIM_ForwardBiased_n-p_EnergyLevel.gif | 400 ]]
 |-
 |The above figure represents an n-p juntion biased in the forward directions.  Without the bias, the conduction band of the p-type material is higher in energy than that of the n-type material by an amount equal to the difference in their Fermi energies.  The applied forward biased voltage (V_B) raises the carriers in the n-type material from the fermi level up to the conduction band of the n-type material.  Thus electrons in the n-type material will flow over to the p-type material.  The current direction, by convention, will be from the p-type material to the n-type material.

← Older revision		Revision as of 17:10, 16 February 2011
Line 169:		Line 169:


−	[[File:TF_EIM_SiliconLattice_np_junction.jpg\| ~~200~~ px]][[File:TF_EIM_p-n_junction.jpg\| ~~200~~ px]]	+	[[File:TF_EIM_SiliconLattice_np_junction.jpg\| 300 px]][[File:TF_EIM_p-n_junction.jpg\| 300 px]]

	Note: The material still has a net charge of zero. The semi-conductor has excess FREE electrons on the n-side and excess HOLES on the p-side of the junction. Notice this looks like a charged up capacitor with a voltage difference to be in order for charge to move/conduct.		Note: The material still has a net charge of zero. The semi-conductor has excess FREE electrons on the n-side and excess HOLES on the p-side of the junction. Notice this looks like a charged up capacitor with a voltage difference to be in order for charge to move/conduct.

@@ Line 99: / Line 99: @@
 ;Note: At room temperature: kT = 1/40 eV
-[[File:TF_EIM_FermiDistrib.jpg| 400 px]]
+[[File:TF_EIM_FermiDistrib.jpg| 600 px]]
-[[File:TF_EIM_E-vs-FermiFunct.png| 400 px]]
+[[File:TF_EIM_E-vs-FermiFunct.png| 300 px]]
 :<math>E_f = E_{gap}/2 =</math> (half of the energy needed to move from the valence to the conduction band

@@ Line 66: / Line 66: @@
 If you replace silicon atoms in the lattice with atoms that have either 3 valance or 5 valence electrons (doping) your can create sites with either a deficient number of electrons (a missing bond) or extra electrons (complete bond with a free electron)
-[[File:TF_EIM_SiliconLattice_np_junction.jpg| 200 px]]
+[[File:TF_EIM_SiliconLattice_np_junction.jpg| 400 px]]
 By Doping silicon you can create sites with extra electrons (n-type) or sites with a deficient number of electrons (vacancies or holes ) (P-type)
 =Fermi-Dirac Statistics=

← Older revision		Revision as of 17:09, 16 February 2011
Line 29:		Line 29:


−	[[File:TF_EIM_Crystal_Cell_EnergyLevels.png\| ~~200~~ px]]	+	[[File:TF_EIM_Crystal_Cell_EnergyLevels.png\| 400 px]]

	;Notice		;Notice