SiC-Diodes - Revision history

Foretony at 20:58, 14 March 2012

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Foretony at 01:54, 14 March 2012

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Foretony: Created page with ' Silicon Carbide Schottsky Diode for ion detection in vacuum From http://etd.ohiolink.edu/view.cgi/Zelaski%20Alexandra%20R.pdf?osu1316486528 The silicon carbide used in this p…'

2012-03-14T01:53:26Z

Created page with ' Silicon Carbide Schottsky Diode for ion detection in vacuum From http://etd.ohiolink.edu/view.cgi/Zelaski%20Alexandra%20R.pdf?osu1316486528 The silicon carbide used in this p…'

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Silicon Carbide Schottsky Diode for ion detection in vacuum

From http://etd.ohiolink.edu/view.cgi/Zelaski%20Alexandra%20R.pdf?osu1316486528

The silicon carbide used in this project had a low-doped (5x1014 atoms/cm3 of nitrogen) 21 micron thick epitaxial layer grown on top of a 300 micron thick bulk substrate with a nitrogen doping concentration of 1x1018 atoms/cm3. 100 nm of nickel, 10 nm of titanium, and 10 nm of gold were deposited, in that order, on the epitaxial side and annealed to form a Schottky contact. An ohmic contact was formed by annealing from 100 nm of nickel deposited on the substrate and annealed. The devices were characterized through IV curve measurements and then exposed to Am-241 alpha particles and high temperature while in vacuum.

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	The silicon carbide used in this project had a low-doped (5x1014 atoms/cm3 of nitrogen) 21 micron thick epitaxial layer grown on top of a 300 micron thick bulk substrate with a nitrogen doping concentration of 1x1018 atoms/cm3. 100 nm of nickel, 10 nm of titanium, and 10 nm of gold were deposited, in that order, on the epitaxial side and annealed to form a Schottky contact. An ohmic contact was formed by annealing from 100 nm of nickel deposited on the substrate and annealed. The devices were characterized through IV curve measurements and then exposed to Am-241 alpha particles and high temperature while in vacuum.		The silicon carbide used in this project had a low-doped (5x1014 atoms/cm3 of nitrogen) 21 micron thick epitaxial layer grown on top of a 300 micron thick bulk substrate with a nitrogen doping concentration of 1x1018 atoms/cm3. 100 nm of nickel, 10 nm of titanium, and 10 nm of gold were deposited, in that order, on the epitaxial side and annealed to form a Schottky contact. An ohmic contact was formed by annealing from 100 nm of nickel deposited on the substrate and annealed. The devices were characterized through IV curve measurements and then exposed to Am-241 alpha particles and high temperature while in vacuum.
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		+	http://bucky-central.me.utexas.edu/RuoffsPDFs/209
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		+	http://etd.ohiolink.edu/view.cgi/Zelaski%20Alexandra%20R.pdf?osu1316486528
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		+	http://www.nnin.org/doc/2011NNINreuRA/2011NNINreuRA_Kuk.pdf

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 Silicon Carbide Schottsky Diode for ion detection in vacuum
 From http://etd.ohiolink.edu/view.cgi/Zelaski%20Alexandra%20R.pdf?osu1316486528
 The silicon carbide used in this project had a low-doped (5x1014 atoms/cm3 of nitrogen) 21 micron thick epitaxial layer grown on top of a 300 micron thick bulk substrate with a nitrogen doping concentration of 1x1018 atoms/cm3. 100 nm of nickel, 10 nm of titanium, and 10 nm of gold were deposited, in that order, on the epitaxial side and annealed to form a Schottky contact. An ohmic contact was formed by annealing from 100 nm of nickel deposited on the substrate and annealed. The devices were characterized through IV curve measurements and then exposed to Am-241 alpha particles and high temperature while in vacuum.