Lab 13 TF EIM - Revision history

Foretony: /* Extra credit */

2011-03-09T04:03:36Z

Extra credit

2011-03-09T04:03:03Z

Extra credit

2011-03-09T04:02:30Z

Questions

2011-03-09T01:52:39Z

Transistor circuit

2011-03-09T01:50:25Z

Transistor circuit

2011-03-09T01:48:02Z

Transistor circuit

2011-03-09T01:42:17Z

2011-03-08T07:09:33Z

Questions

2011-03-08T05:49:54Z

Transistor circuit

2011-03-08T05:49:14Z

Transistor circuit

← Older revision		Revision as of 04:03, 9 March 2011
Line 95:		Line 95:


−	I expect to see a graph <math>(I_{B} -vs- V_{BE} )</math> and a linear fit which is similar to the forward biased diode curves.	+	I expect to see a graph <math>(I_{B} -vs- V_{BE} )</math> and a linear fit which is similar to the forward biased diode curves. Compare your result to what is reported in the data sheet.

	[[Forest_Electronic_Instrumentation_and_Measurement]]		[[Forest_Electronic_Instrumentation_and_Measurement]]

← Older revision		Revision as of 04:03, 9 March 2011
Line 95:		Line 95:


−	I expect to see a graph and a linear fit which is similar to the forward biased diode curves.	+	I expect to see a graph <math>(I_{B} -vs- V_{BE} )</math> and a linear fit which is similar to the forward biased diode curves.

	[[Forest_Electronic_Instrumentation_and_Measurement]]		[[Forest_Electronic_Instrumentation_and_Measurement]]

← Older revision		Revision as of 04:02, 9 March 2011
Line 90:		Line 90:
	#For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)		#For a transistor to conduct I_C the collector-base junction must be ___________ biased.(10 pnts)

		+	=Extra credit=

		+	Measure the Base-Emmiter breakdown voltage. (10 pnts)
		+
		+
		+	I expect to see a graph and a linear fit which is similar to the forward biased diode curves.

	[[Forest_Electronic_Instrumentation_and_Measurement]]		[[Forest_Electronic_Instrumentation_and_Measurement]]

@@ Line 54: / Line 54: @@
 {| border="1"  |cellpadding="20" cellspacing="0
 |-
-|V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B
+|V_{CC} || V_B || V_{BB} || V_ {EC} ||  V_ E || R_E || R_B || I_E || I_B
 |-
-|mV || mV || V || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA
+|mV || mV || V || mV || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA
 |-
-| || || || ||  || || ||
+| || || || ||  || || || ||
 |}
@@ Line 68: / Line 68: @@
 {| border="1"  |cellpadding="20" cellspacing="0
 |-
-|V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B
+|V_{CC} || V_B || V_{BB} || V_ {EC} ||  V_ E || R_E || R_B || I_E || I_B
 |-
-|mV || mV || V || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA
+|mV || mV || V || mV || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA
 |-
-| || || || ||  || || ||
+| || || || ||  || || || ||
 |}

@@ Line 48: / Line 48: @@
 <math>I_B = 2 \mu A</math> , <math>5 \mu A</math> , and  <math>10 \mu A</math>
-.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{bb}-V_{BE}}{R_B}</math>
+.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{BB}-V_{BE}}{R_B}</math>
@@ Line 56: / Line 56: @@
 |V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B
 |-
-|mV || mV || V || mV || \Omega || k\Omega|| mA|| \muA
+|mV || mV || V || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA
 |-
-||| || || ||  || || || ||
+| || || || ||  || || ||
-|-
 |}
@@ Line 74: / Line 65: @@
 .) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A.  Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out
 {| border="1"  |cellpadding="20" cellspacing="0
@@ Line 80: / Line 70: @@
 |V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B
 |-
-|mV || mV || V || mV || \Omega || k\Omega|| mA|| \muA
+|mV || mV || V || mV || <math>\Omega</math> || k<math>\Omega</math>|| mA|| \muA
 |-
-| || || || ||  || || || ||
+| || || || ||  || || ||
-|-
 |}

← Older revision		Revision as of 01:48, 9 March 2011
Line 35:		Line 35:
	2.) Construct the circuit below according to the type of transistor you have.		2.) Construct the circuit below according to the type of transistor you have.

−	[[File:TF_EIM_Lab13_Circuit.png \| 200 px]]	+	[[File:TF_EIM_Lab13a_Circuit.png \| 200 px]][[File:TF_EIM_Lab13_Circuit.png \| 200 px]]

@@ Line 1: / Line 1: @@
-DC Transistor Curves
+DC Bipolar Transistor Curves
-[[Media:2N3906.pdf]]
+[[Media:2N3904.pdf]][[Media:2N3906.pdf]]
-[[File:2N3906_PinOuts.png]]
+[[File:2N3904_PinOuts.png | 200 px]][[File:2N3906_PinOuts.png | 200 px]]
 =Transistor circuit=
@@ Line 32: / Line 36: @@
 [[File:TF_EIM_Lab13_Circuit.png | 200 px]]
 .) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{bb}-V_{BE}}{R_B}</math>
@@ Line 39: / Line 54: @@
 {| border="1"  |cellpadding="20" cellspacing="0
 |-
-|V_{CC} || V_B || V_ E || I_B || I_E
+|V_{CC} || V_B || V_{BB} || V_ E || R_E || R_B || I_E || I_B
 |-
-| || || || ||
+|mV || mV || V || mV || \Omega || k\Omega|| mA|| \muA
 |-
 | || || || ||
@@ Line 57: / Line 74: @@
 .) Repeat the previous measurements for <math>I_B \approx 5 \mbox{ and } 10 \mu</math> A.  Remember to keep <math>I_CV_{CE} < P_{max}</math> so the transistor doesn't burn out
 .) Graph <math>I_C</math> -vs- <math>V_{CE}</math> for each value of <math>I_B</math> and <math>V_{CC}</math> above. (40 pnts)

@@ Line 64: / Line 64: @@
 =Questions=
-#What is <math>h_{FE}</math> or <math>\beta</math> for the transistor? (10 pnts)
+#Compare your measured value of <math>h_{FE}</math> or <math>\beta</math> for the transistor to the spec sheet? (10 pnts)
 #What is <math>\alpha</math> for the transistor?(10 pnts)
 #The base must always be more _________(________) than the emitter for a npn (pnp)transistor to conduct I_C.(10 pnts)

← Older revision		Revision as of 05:49, 8 March 2011
Line 30:		Line 30:

	2.) Construct the circuit below according to the type of transistor you have.		2.) Construct the circuit below according to the type of transistor you have.
		+
		+	[[File:TF_EIM_Lab13_Circuit.png \| 200 px]]

	3.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{bb}-V_{BE}}{R_B}</math>		3.) Measure the emitter current <math>I_E</math> for several values of <math>V_{CE}</math> by changing <math>V_{CC}</math> such that the base current <math>I_B = 2 \mu</math> A is constant. <math>I_B \approx \frac{V_{bb}-V_{BE}}{R_B}</math>